N channel MOSFET KIA Semicon Tech KNF6140A delivering 10A current rating and 400V voltage capability
Key Attributes
Model Number:
KNF6140A
Product Custom Attributes
Drain To Source Voltage:
400V
Current - Continuous Drain(Id):
10A
Operating Temperature -:
-55℃~+150℃
RDS(on):
350mΩ@10V,5A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
21pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.254nF
Pd - Power Dissipation:
45W
Gate Charge(Qg):
28nC@200V
Mfr. Part #:
KNF6140A
Package:
TO-220F-3
Product Description
Product Overview
This N-CHANNEL MOSFET from KIA SEMICONDUCTORS, model 6140A, offers a 10A current rating and 400V voltage capability. It features proprietary new planar technology, low RDS(ON) of 0.35 (typ.) at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. Ideal for ballast and lighting, DC-AC inverters, and other applications.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Model: 6140A
Technical Specifications
| Part Number | Package | Brand | VDSS (V) | VGSS (V) | ID (A) | ID @ Tc=100C (A) | IDM (A) | EAS (mJ) | dv/dt (V/ns) | PD (W) | RJC (C/W) | RJA (C/W) | BVDSS (V) | IDSS (uA) | IGSS (nA) | RDS(ON) () | VGS(TH) (V) | gFS (S) | Ciss (pF) | Crss (pF) | Coss (pF) | Qg (nC) | Qgs (nC) | Qgd (nC) | ISD (A) | ISM (A) | VSD (V) | trr (ns) | Qrr (uC) |
| KNP6140A | TO-220 | KIA | 400 | 30 | 10 | Figure3 | Figure6 | 650 | 5.0 | 140 | 0.89 | 62 | 400 | 1 (VDS=400V, VGS=0V) / 100 (VDS=320V,VGS=0V, TJ =125C) | 100 | 0.35 (typ. @ VGS=10V, ID=5A) | 2.0 - 4.0 | 12 (typ. @ VDS=20V,ID=10A) | 1254 (typ. @ VGS=0V, VDS=25V, f=1.0MHZ) | 21 (typ.) | 150 (typ.) | 28 (typ. @ VDD=200V, ID=10A, VGS=0 to 10V) | 7.0 (typ.) | 11 (typ.) | -- | -- | -- | -- | -- |
| KNF6140A | TO-220F | KIA | 400 | 30 | 10* | Figure3 | Figure6 | 650 | 5.0 | 45 | 2.7 | 100 | 400 | 1 (VDS=400V, VGS=0V) / 100 (VDS=320V,VGS=0V, TJ =125C) | 100 | 0.35 (typ. @ VGS=10V, ID=5A) | 2.0 - 4.0 | 12 (typ. @ VDS=20V,ID=10A) | 1254 (typ. @ VGS=0V, VDS=25V, f=1.0MHZ) | 21 (typ.) | 150 (typ.) | 28 (typ. @ VDD=200V, ID=10A, VGS=0 to 10V) | 7.0 (typ.) | 11 (typ.) | 10 | 40 | 1.5 (IS=10A, VGS=0V) | 303 (VGS=0V ,IF=10A, diF/dt=100A/s) | 1.8 (uC) |
2410010001_KIA-Semicon-Tech-KNF6140A_C455993.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Low voltage N channel MOSFET XCH GSW25N65EF Multi EPI Super Junction for power conversion solutions
Product OverviewThe GSW/GSA25N65EF is a low voltage N-channel Multi-EPI Super-Junction power MOSFET from XCH Semiconductor. It features advanced technology for enhanced characteristics such as fast switching times, low Ciss and Crss, low on-resistance, and excellent avalanche characteristics. This ...
Surface Mounted Rectifier ZHIDE US3M Series High Voltage 1000V Rectifier for Electronic Circuits
Product OverviewThe US3A-US3M series are surface-mounted high-efficiency rectifiers designed for general-purpose applications. They offer low reverse leakage, high forward surge capability, and high reliability, making them suitable for demanding environments. These rectifiers are guaranteed for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
