Low loss MOSFET KIA Semicon Tech KCM2920K 130A 200V ideal for high frequency DC DC converter designs
Key Attributes
Model Number:
KCM2920K
Product Custom Attributes
Drain To Source Voltage:
200V
Current - Continuous Drain(Id):
130A
Operating Temperature -:
-55℃~+175℃
RDS(on):
11.5mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
390pF
Pd - Power Dissipation:
333W
Input Capacitance(Ciss):
6.78nF
Gate Charge(Qg):
75nC@10V
Mfr. Part #:
KCM2920K
Package:
TO-247
Product Description
Product Overview
This 130A, 200V N-CHANNEL MOSFET utilizes SGT MOSFET technology and proprietary New Trench Technology. It offers a low RDS(ON) of 9.8m (typ.) at VGS=10V, low gate charge to minimize switching loss, and a fast recovery body diode. It is ideal for DC-DC Converters and high-frequency switching and synchronous rectification applications.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Model Series: 2920K
Technical Specifications
| Parameter | Symbol | TO-263, TO-220 | TO-247 | Unit |
| Thermal Resistance, Junction-to-Case | RJC | 0.45 | 0.45 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 62 | 50 | C/W |
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250uA | 200 | - | - | V |
| Drain-to-Source Leakage Current | IDSS | VDS=200V, VGS=0V | - | - | 1 | uA |
| Drain-to-Source Leakage Current | IDSS | VDS=160V,TJ=125C | - | - | 100 | uA |
| Gate-to-Source Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Drain-to-Source ON Resistance | RDS(ON) | VGS=10V, ID=40A | - | 9.8 | 11.5 | m |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.5 | - | 4.5 | V |
| Input Capacitance | Ciss | VGS=0V,VDS=100V, f=1.0MHZ | - | 6780 | - | pF |
| Reverse Transfer Capacitance | Crss | VGS=0V,VDS=100V, f=1.0MHZ | - | 5 | - | pF |
| Output Capacitance | Coss | VGS=0V,VDS=100V, f=1.0MHZ | - | 390 | - | pF |
| Total Gate Charge | Qg | VDD=100V,ID=55A, VGS=10V | - | 75 | - | nC |
| Gate-to-Source Charge | Qgs | VDD=100V,ID=55A, VGS=10V | - | 35 | - | - |
| Gate-to-Drain (Miller) Charge | Qg | VDD=100V,ID=55A, VGS=10V | - | 10 | - | - |
| Turn-on Delay Time | td(ON) | VDD=100V, ID=55A, RG=4.7,VGS=10V | - | 40 | - | nS |
| Rise Time | trise | VDD=100V, ID=55A, RG=4.7,VGS=10V | - | 15 | - | - |
| Turn-Off Delay Time | td(OFF) | VDD=100V, ID=55A, RG=4.7,VGS=10V | - | 45 | - | - |
| Fall Time | tfall | VDD=100V, ID=55A, RG=4.7,VGS=10V | - | 10 | - | - |
| Continuous Source Current | ISD | Integral PN-diode in MOSFET | - | - | 130 | A |
| Pulsed Source Current | ISM | Integral PN-diode in MOSFET | - | - | 440 | A |
| Forward Voltage | VSD | IS=80A, VGS=0V | - | - | 1.2 | V |
| Reverse recovery time | trr | IF=55A, diF/dt=100A/s | - | 163 | - | ns |
| Reverse recovery charge | Qrr | IF=55A, diF/dt=100A/s | - | 570 | - | uC |
| Parameter | Symbol | Ratings | Unit |
| Drain-to-Source Voltage | VDSS | 200 | V |
| Gate-to-Source Voltage | VGSS | 20 | V |
| Continuous Drain Current | ID | 130 (Tc=25 C) | A |
| Continuous Drain Current | ID | 75 (Tc=100 C) | A |
| Pulsed Drain Current | IDM | 440 (at VGS=10V) | A |
| Single Pulse Avalanche Energy | EAS | 2000 (L=10mH) | mJ |
| Power Dissipation | PD | 333 | W |
| Derating Factor above 25C | PD | 2.22 | W/C |
| Maximum Temperature for Soldering Leads at 0.063in (1.6mm) from Case for 10 seconds | TL | 300 | C |
| Maximum Temperature for Soldering Package Body for 10 seconds | TPAK | 260 | C |
| Operating and Storage Temperature Range | TJ&TSTG | -55 to 175 | C |
2411121110_KIA-Semicon-Tech-KCM2920K_C41369545.pdf
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