Glass DO35 Silicon Planar Zener Diode JUXING BZX55C6V2 for Accurate Voltage Regulation Applications
Key Attributes
Model Number:
BZX55C6V2
Product Custom Attributes
Impedance(Zzt):
10Ω
Pd - Power Dissipation:
500mW
Zener Voltage(Range):
5.8V~6.6V
Zener Voltage(Nom):
6.2V
Impedance(Zzk):
200Ω
Mfr. Part #:
BZX55C6V2
Package:
DO-35
Product Description
Product Overview
Silicon Planar Zener Diodes with Zener voltages graded according to the international E24 standard. Other tolerances and higher Zener voltages are available upon request. These diodes are suitable for various applications requiring precise voltage regulation.
Product Attributes
- Brand: BZX55C
- Material: Silicon Planar
- Case: Glass DO-35
- Website: http://www.trr-jx.com
- Version: 02
Technical Specifications
| Type | Zener Voltage Range (V) | VZT at IZT (V) | IZT (mA) | ZZT Max. () | ZZK at IZK Max. () | IZK Max. (A) | IR at VR Max. (A) | Temp. Coefficient of Zener Voltage TKvz (%/K) |
| BZX55C0V8 | 0.73...0.83 | 0.8 | 5 | 8 | 50 | 1 | - | -0.26...-0.23 |
| BZX55C2V0 | 1.8...2.15 | 2 | 5 | 85 | 600 | 1 | 100 | -0.09...-0.06 |
| BZX55C2V2 | 2.08...2.33 | 2.2 | 5 | 85 | 600 | 1 | 75 | -0.09...-0.06 |
| BZX55C2V4 | 2.28...2.56 | 2.4 | 5 | 85 | 600 | 1 | 50 | -0.09...-0.06 |
| BZX55C2V7 | 2.5...2.9 | 2.7 | 5 | 85 | 600 | 1 | 10 | -0.09...-0.06 |
| BZX55C3V0 | 2.8...3.2 | 3 | 5 | 85 | 600 | 1 | 4 | -0.08...-0.05 |
| BZX55C3V3 | 3.1...3.5 | 3.3 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V6 | 3.4...3.8 | 3.6 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C3V9 | 3.7...4.1 | 3.9 | 5 | 85 | 600 | 1 | 2 | -0.08...-0.05 |
| BZX55C4V3 | 4...4.6 | 4.3 | 5 | 75 | 600 | 1 | 1 | -0.06...-0.03 |
| BZX55C4V7 | 4.4...5 | 4.7 | 5 | 60 | 600 | 1 | 0.5 | -0.05...+0.02 |
| BZX55C5V1 | 4.8...5.4 | 5.1 | 5 | 35 | 550 | 1 | 0.1 | -0.02...+0.02 |
| BZX55C5V6 | 5.2...6 | 5.6 | 5 | 25 | 450 | 1 | 0.1 | -0.05...+0.05 |
| BZX55C6V2 | 5.8...6.6 | 6.2 | 5 | 10 | 200 | 1 | 0.1 | 0.03...0.06 |
| BZX55C6V8 | 6.4...7.2 | 6.8 | 5 | 8 | 150 | 1 | 0.1 | 0.03...0.07 |
| BZX55C7V5 | 7...7.9 | 7.5 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.07 |
| BZX55C8V2 | 7.7...8.7 | 8.2 | 5 | 7 | 50 | 1 | 0.1 | 0.03...0.08 |
| BZX55C9V1 | 8.5...9.6 | 9.1 | 5 | 10 | 50 | 1 | 0.1 | 0.03...0.09 |
| BZX55C10 | 9.4...10.6 | 10 | 5 | 15 | 70 | 1 | 0.1 | 0.03...0.1 |
| BZX55C11 | 10.4...11.6 | 11 | 5 | 20 | 70 | 1 | 0.1 | 0.03...0.11 |
| BZX55C12 | 11.4...12.7 | 12 | 5 | 20 | 90 | 1 | 0.1 | 0.03...0.11 |
| BZX55C13 | 12.4...14.1 | 13 | 5 | 26 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C15 | 13.8...15.6 | 15 | 5 | 30 | 110 | 1 | 0.1 | 0.03...0.11 |
| BZX55C16 | 15.3...17.1 | 16 | 5 | 40 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C18 | 16.8...19.1 | 18 | 5 | 50 | 170 | 1 | 0.1 | 0.03...0.11 |
| BZX55C20 | 18.8...21.2 | 20 | 5 | 55 | 220 | 1 | 0.1 | 0.03...0.11 |
| BZX55C22 | 20.8...23.3 | 22 | 5 | 55 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C24 | 22.8...25.6 | 24 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C27 | 25.1...28.9 | 27 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C30 | 28...32 | 30 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C33 | 31...35 | 33 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C36 | 34...38 | 36 | 5 | 80 | 220 | 1 | 0.1 | 0.04...0.12 |
| BZX55C39 | 37...41 | 39 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C43 | 40...46 | 43 | 2.5 | 90 | 500 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C47 | 44...50 | 47 | 2.5 | 110 | 600 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C51 | 48...54 | 51 | 2.5 | 125 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C56 | 52...60 | 56 | 2.5 | 135 | 700 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C62 | 58...66 | 62 | 2.5 | 150 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C68 | 64...72 | 68 | 2.5 | 200 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
| BZX55C75 | 70...79 | 75 | 2.5 | 250 | 1000 | 0.5 | 0.1 | 0.04...0.12 |
Absolute Maximum Ratings
| Parameter | Symbol | Value | Unit |
| Power Dissipation | Ptot | 5001) | mW |
| Junction Temperature | Tj | 175 | C |
| Storage Temperature Range | Tstg | -55 to +175 | C |
Characteristics
| Parameter | Symbol | Max. | Unit |
| Thermal Resistance Junction to Ambient Air | RthA | 0.31) | K/mW |
| Forward Voltage at IF = 100 mA | VF | 1 | V |
1) Valid provided that leads are kept at ambient temperature at a distance of 8 mm from case.
2) The BZX55C0V8 is a silicon diode with operation in forward direction. Hence, the index of all parameters should be "F" instead of "Z". Connect the cathode lead to the negative pole.
2504211825_JUXING-BZX55C6V2_C5365394.pdf
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