TO92 plastic encapsulated transistor KTP S8050 suitable for switching and amplification in electronics
Key Attributes
Model Number:
S8050
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
5V
Pd - Power Dissipation:
625mW
Type:
NPN
Number:
-
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
25V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
S8050
Package:
TO-92
Product Description
Product Overview
The KTP Semiconductor S8050 is a TO-92 plastic-encapsulated diode designed for general-purpose amplification and switching. It is a complement to the S8550 transistor, offering a high total power dissipation of 625mW and a collector current of 500mA.
Product Attributes
- Brand: KTP Semiconductor
- Package: TO-92 Plastic-Encapsulate
- Complementary Part: S8550
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Collector-Base Breakdown Voltage | BVcbo | Ic=100uA, Ie=0 | 40 | V | ||
| Collector-Emitter Breakdown Voltage | BVceo | Ic =1mA, Ib=0 | 25 | V | ||
| Emitter-Base Breakdown Voltage | BVebo | Ie=100uA, Ic=0 | 5 | V | ||
| Collector Cutoff Current | Icbo | Vcb=25V, Ie=0 | 100 | nA | ||
| Emitter Cutoff Current | Iebo | Veb=3V, Ic=0 | 100 | nA | ||
| Collector-Emitter Saturation Voltage | Vce(sat) | Ic=500mA, Ib=50mA | 0.16 | 0.6 | V | |
| Base-Emitter Saturation Voltage | Vbe(sat) | Ic=500mA, Ib=50mA | 0.91 | 1.2 | V | |
| Base-Emitter On Voltage | Vbe(on) | Vce=1V, Ic=10mA | 0.6 | 0.67 | 0.7 | V |
| DC Current Gain (Hfe1) | Hfe1 | Vce=1V, Ic=50mA | 64 | 300 | ||
| DC Current Gain (Hfe2) | Hfe2 | Vce=1V, Ic=500mA | 30 | |||
| Collector Current | Ic | 500 | mA | |||
| Collector Dissipation | Pc | 625 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | 150 |
| Hfe1 Classification | B | C | D |
| Range | 85-160 | 120-200 | 160-300 |
2412191542_KTP-S8050_C42417226.pdf
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