N Channel power MOSFET JUXING 4N65 featuring high current rating and fast switching for power circuits
Key Attributes
Model Number:
4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.6Ω@10V
Operating Temperature -:
-45℃~+125℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
48W
Mfr. Part #:
4N65
Package:
TO-252
Product Description
Product Overview
The 4N65 is an N-Channel Mode Power MOSFET designed for power switching applications. It features high current rating, lower RDS(ON), and fast switching capability, making it suitable for various power applications.
Product Attributes
- Product ID: 4N65
- Package: TO-252
- Features: High Current Rating, Lower RDS(ON), Fast Switching Capability
- Application: Power switching application
- Website: http://www.trr-jx.com
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| MAXIMUM RATINGS | VDS | 650 | V | |||
| VGS | ±30 | V | ||||
| ID | 4.0 | A | ||||
| IDM | 16 | A | ||||
| EAS | Single Pulsed Avalanche Energy | 280 | mJ | |||
| PD | 48 | W | ||||
| Tj | -45 | 125 | ||||
| Tstg | -45 | 125 | ||||
| ELECTRICAL CHARACTERISTICS | V(BR)DSS | VGS=0V,ID=250µA | 650 | V | ||
| VSD | VGS=0V,IS=4.0A | 1.5 | V | |||
| IDSS | VDS=650V,VGS=0V | 1 | µA | |||
| IGSS | VDS=0V,VGS=±30V | ±100 | nA | |||
| On characteristics | VGS(th) | VDS=VGS,ID=250µA | 2.0 | 4.0 | V | |
| RDS(on) | VGS=10V,ID=1.0A | 2.3 | 2.6 | Ω | ||
| RθJA | Thermal Resistance From Junction To Ambient | 100 | “C/W | |||
| RθJC | Thermal Resistance From Junction To Case | 2.6 | “C/W |
Package Information
| Package | Product ID | Qty (pcs) |
| TO-252 | 4N65 | 2500 |
2409302301_JUXING-4N65_C22440676.pdf
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