Low Resistance Dual P Channel MOSFET KEXIN 2KJ7102DFN PDFN3.3x3.3 8 Package with Optimized Switching
Key Attributes
Model Number:
2KJ7102DFN
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
8.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
25mΩ@4.5V,2.5A
Gate Threshold Voltage (Vgs(th)):
650mV
Reverse Transfer Capacitance (Crss@Vds):
161pF@10V
Number:
2 P-Channel
Input Capacitance(Ciss):
1.275nF@10V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
33nC@10V
Mfr. Part #:
2KJ7102DFN
Package:
PDFN-8(3.3x3.3)
Product Description
Product Overview
The Kexin 2KJ7102DFN is a Dual P-Channel MOSFET in a PDFN3.3x3.3-8 package. It offers a VDS of -20V and an ID of -30A, with a low RDS(ON) of 20m @ VGS=-10V. Optimized gate charge minimizes switching losses, making it suitable for applications requiring efficient power management.
Product Attributes
- Brand: Kexin
- SMD Type: MOSFET
- Package: PDFN3.3x3.3-8
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -20 | V | ||
| VDS=-16V, VGS=0V | -1 | V | ||||
| VDS=-10V, VGS=0V, TJ = 55 | -10 | V | ||||
| VDS=-10V, ID=-2.5A, VGS = 4.5V | 25 | |||||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=-250A | -0.65 | -1.2 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-10V, ID=-30A | 20 | m | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-20V, VGS=0V | -1 | A | ||
| Continuous Drain Current | ID | TC = 25 | -30 | A | ||
| Pulsed Drain Current | IDM | Note 1 | -40 | A | ||
| Avalanche Current | IAS | -21.5 | A | |||
| Avalanche Energy | EAS | L = 0.1mH | 23 | mJ | ||
| Body-Diode Continuous Current | IS | Note 3 | -24 | A | ||
| Diode Forward Voltage | VSD | IF=-2.5 A,VGS=0V | -1.2 | V | ||
| Total Gate Charge | Qg | VDS=-10V, ID=-2.5A | 33 | nC | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-10V, f=1MHz | 1275 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-10V, f=1MHz | 179 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-10V, f=1MHz | 161 | pF | ||
| Gate Resistance | Rg | 9.5 | ||||
| Reverse Recovery Time | trr | IF = -2.5A , dlF/dt = 100A /S | 13 | nS | ||
| Reverse Recovery Charge | Qrr | IF = -2.5A , dlF/dt = 100A /S | 5.5 | nC | ||
| Thermal Resistance, Junction- to-Case | RJC | Steady-State | 4.3 | /W | ||
| Thermal Resistance, Junction- to-Ambient | RJA | Steady-State (Note 2) | 72 | /W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | |||
2410121619_KEXIN-2KJ7102DFN_C499624.pdf
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