Low On Resistance P Channel MOSFET in SMD SOT 23 3 Package KEXIN SI2303 for Electronic Applications
Key Attributes
Model Number:
SI2303
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
1.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
200mΩ@10V,1.7A
Gate Threshold Voltage (Vgs(th)):
-
Reverse Transfer Capacitance (Crss@Vds):
19pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
226pF@15V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
SI2303
Package:
SOT-23
Product Description
Product Overview
The SI2303 (KI2303) is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-resistance and is available in an SMD SOT-23-3 package.
Product Attributes
- Brand: Kexin
- Origin: China (implied by www.kexin.com.cn)
- SMD Type: SOT-23-3
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -1.0 | -3.0 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-10V, ID=-1.7A | 200 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-1.3A | 380 | m | ||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | Ta = 25 | -1.7 | A | ||
| Continuous Drain Current | ID | Ta = 70 | -1.4 | A | ||
| Pulsed Drain Current | IDM | -10 | A | |||
| Power Dissipation | PD | Ta = 25 | 1.25 | W | ||
| Power Dissipation | PD | Ta = 70 | 0.8 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | (surface mounted on FR4 board) | 100 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | A | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V, TJ=55 | -10 | A | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-15V, f=1MHz | 226 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-15V, f=1MHz | 87 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-15V, f=1MHz | 19 | pF | ||
| Total Gate Charge | Qg | VGS=-10V, VDS=-4.5V, ID=-1.7A | 5.8 | nC | ||
| Gate Source Charge | Qgs | VGS=-10V, VDS=-4.5V, ID=-1.7A | 0.8 | nC | ||
| Gate Drain Charge | Qgd | VGS=-10V, VDS=-4.5V, ID=-1.7A | 1.5 | nC | ||
| Turn-On DelayTime | td(on) | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 20 | ns | ||
| Turn-On Rise Time | tr | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 20 | ns | ||
| Turn-Off DelayTime | td(off) | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 35 | ns | ||
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-15V, RL=15,RGEN=6 | 9.0 | ns | ||
| Maximum Body-Diode Continuous Current | IS | -1.25 | A | |||
| Diode Forward Voltage | VSD | IS=-1.25A,VGS=0V | -0.8 | -1.2 | V |
2410121806_KEXIN-SI2303_C489361.pdf
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