Low On Resistance N Channel MOSFET KEXIN IRLML2402 Suitable for Switching and Amplification Circuits
Key Attributes
Model Number:
IRLML2402
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
1.2A
Operating Temperature -:
-55℃~+150℃
RDS(on):
250mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
25pF
Number:
1 N-channel
Output Capacitance(Coss):
51pF
Input Capacitance(Ciss):
110pF
Pd - Power Dissipation:
540mW
Gate Charge(Qg):
2.6nC@16V
Mfr. Part #:
IRLML2402
Package:
SOT-23
Product Description
Product Overview
The IRLML2402 is a N-Channel MOSFET designed for various electronic applications. It features a low on-resistance and high current handling capabilities, making it suitable for switching and amplification tasks.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 20 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | V | ||
| Continuous Drain Current | ID | TA=25 | 1.2 | A | ||
| Continuous Drain Current | ID | TA=70 | 0.95 | A | ||
| Pulsed Drain Current | IDM | 7.4 | A | |||
| Power Dissipation | PD | TA=25 | 540 | mW | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | 230 | /W | |||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | to | 150 | ||
| Drain-Source Breakdown Voltage | VDSS | ID=250A, VGS=0V | 20 | V | ||
| Gate-Body Leakage Current | IGSS | VDS=0V, VGS=12V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS , ID=250A | 0.7 | V | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=4.5V, ID=0.93A (Note.1) | 250 | m | ||
| Static Drain-Source On-Resistance | RDS(On) | VGS=2.7V, ID=0.47A (Note.1) | 350 | m | ||
| Forward Transconductance | gFS | VDS=10V, ID=0.47A | 1.3 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=15V, f=1MHz | 110 | pF | ||
| Output Capacitance | Coss | VDS=10V, ID=0.93A, RD=11,RG=6.2 | 51 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=16V, VDS=4.5V, ID=0.93A | 25 | pF | ||
| Total Gate Charge | Qg | VDS=10V, ID=0.93A, RD=11,RG=6.2 | 2.6 | 3.9 | nC | |
| Gate Source Charge | Qgs | VDS=10V, ID=0.93A, RD=11,RG=6.2 | 0.41 | 0.62 | nC | |
| Gate Drain Charge | Qg | VDS=10V, ID=0.93A, RD=11,RG=6.2 | 1.1 | 1.7 | nC | |
| Turn-On DelayTime | td(on) | VGS=16V, VDS=4.5V, ID=0.93A | 2.5 | ns | ||
| Turn-On Rise Time | tr | VGS=16V, VDS=4.5V, ID=0.93A | 9.5 | ns | ||
| Turn-Off DelayTime | td(off) | VGS=16V, VDS=4.5V, ID=0.93A | 9.7 | ns | ||
| Turn-Off Fall Time | tf | VGS=16V, VDS=4.5V, ID=0.93A | 4.8 | ns | ||
| Body Diode Reverse Recovery Time | trr | IS=0.93A,VGS=0V,TJ = 25 (Note.1) | 25 | 38 | ns | |
| Body Diode Reverse Recovery Charge | Qrr | IS=0.93A,VGS=0V,TJ = 25 (Note.1) | 16 | 24 | nC | |
| Maximum Body-Diode Continuous Current | IS | 0.54 | A | |||
| Pulse Source Current (Body Diode) | ISM | 7.4 | A | |||
| Diode Forward Voltage | VSD | IS=0.93A,VGS=0V,TJ = 25 (Note.1) | 1.2 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=20V, VGS=0V | 1 | uA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=16V, VGS=0V, TJ=125 | 25 | uA |
2410121455_KEXIN-IRLML2402_C489350.pdf
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