P Channel MOSFET KEXIN KO3401 with Thermal Resistance Junction to Ambient and Dissipation Rating
Key Attributes
Model Number:
KO3401
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
4.2A
RDS(on):
120mΩ@2.5V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.4nC
Mfr. Part #:
KO3401
Package:
SOT-23-3
Product Description
Product Overview
The AO3401 (KO3401) is a P-Channel Enhancement Mode MOSFET designed for various electronic applications. It offers key features such as a drain-source voltage of -30V, continuous drain current of -4.2A at VGS=-10V, and low on-resistance values.
Product Attributes
- Brand: Kexin (implied by www.kexin.com.cn)
- SMD Type: SOT-23-3
- Marking: A1*
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | ±12 | V | |||
| Continuous Drain Current | ID | Ta = 25 | -4.2 | A | ||
| Continuous Drain Current | ID | Ta = 70 | -3.5 | A | ||
| Pulsed Drain Current | IDM | -30 | A | |||
| Power Dissipation | PD | Ta = 25 | 1.4 | W | ||
| Power Dissipation | PD | Ta = 70 | 1 | W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | t ≤ 10s | 90 | °C/W | ||
| Thermal Resistance.Junction- to-Ambient | RthJA | 125 | °C/W | |||
| Thermal Resistance.Junction- to-Case | RthJC | 60 | °C/W | |||
| Junction Temperature | TJ | 150 | °C | |||
| Storage Temperature Range | Tstg | -55 | 150 | °C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=-250μA, VGS=0V | -30 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=±12V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250μA | -0.4 | -1 | -1.3 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V, VGS=0V | -1 | -5 | μA | |
| On state drain current | ID(ON) | VGS=-10V, ID=-4.2A | 42 | 50 | mΩ | |
| On state drain current | ID(ON) | VGS=-4.5V, ID=-4A | 53 | 65 | mΩ | |
| On state drain current | ID(ON) | VGS=-2.5V, ID=-1A | 80 | 120 | mΩ | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-10V, ID=-4.2A | 42 | 50 | mΩ | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-4.5V, ID=-4A | 53 | 65 | mΩ | |
| Static Drain-Source On-Resistance | RDS(On) | VGS=-2.5V, ID=-1A | 80 | 120 | mΩ | |
| Forward Transconductance | gFS | VDS=-5V, ID=-5A | 7 | 11 | S | |
| Input Capacitance | Ciss | VGS=0V, VDS=0V, f=1MHz | 95 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=0V, f=1MHz | 11.5 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=0V, f=1MHz | 7.7 | pF | ||
| Gate resistance | Rg | 6 | Ω | |||
| Total Gate Charge | Qg | 9.4 | nC | |||
| Gate Source Charge | Qgs | 2 | nC | |||
| Gate Drain Charge | Qg | 3 | nC | |||
| Turn-On DelayTime | td(on) | 6.3 | ns | |||
| Turn-On Rise Time | tr | 3.2 | ns | |||
| Turn-Off DelayTime | td(off) | 38.3 | ns | |||
| Turn-Off Fall Time | tf | 12 | ns | |||
| Body Diode Reverse Recovery Time | trr | IF=-4A, dI/dt=100A/μs | 20.2 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF=5A, dI/dt=100A/μs | 11.2 | nC | ||
| Maximum Body-Diode Continuous Current | IS | -2.2 | A | |||
| Diode Forward Voltage | VSD | IS=-1A,VGS=0V | -0.75 | -1 | V | |
2407310959_KEXIN-KO3401_C369931.pdf
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