Sot 523 package n channel mosfet KUU 2SK3019 designed for low on resistance and fast switching speed
Key Attributes
Model Number:
2SK3019
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-
RDS(on):
13Ω@2.5V
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Output Capacitance(Coss):
9pF
Input Capacitance(Ciss):
13pF
Pd - Power Dissipation:
150mW
Gate Charge(Qg):
-
Mfr. Part #:
2SK3019
Package:
SOT-523
Product Description
Product Overview
This N-Channel MOSFET in a SOT-523 surface mount plastic package offers low on-resistance, fast switching speed, and low voltage drive capabilities, making it ideal for portable equipment. It features easily designed drive circuits and is suitable for paralleling. The device is RoHS Compliant & Green EMC with a Matte Tin(Sn) lead finish.
Product Attributes
- Package: SOT-523
- Lead Finish: Matte Tin(Sn)
- Certifications: RoHS Compliant & Green EMC
- Weight: approx. 0.002g
- Device Marking Code: KN
Technical Specifications
| Parameter | Test Condition | Min | Typ | Max | Units |
| Absolute Maximum Ratings | |||||
| Drain-Source Voltage (VDS) | 30 | V | |||
| Continuous Gate-Source Voltage (VGS) | ±20 | V | |||
| Continuous Drain Current (ID) | TA = 25°C | 100 | mA | ||
| Power Dissipation (PD) | TA = 25°C | 150 | mW | ||
| Thermal Resistance (RJA) | 833 | °C /W | |||
| Storage Temperature Range (TSTG) | -55 | +150 | °C | ||
| Operating Junction Temperature (TJ) | +150 | °C | |||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (BVDSS) | VGS=0V, ID=10uA | 30 | Volts | ||
| Gate-Body Leakage (IGSS) | VDS=0V, VGS=±20V | ±1 | uA | ||
| Zero Gate Voltage Drain Current (IDSS) | VDS=30V, VGS=0V | 1 | µA | ||
| Gate-Threshold Voltage (Vth(GS)) | VDS=3V, ID=100uA | 0.8 | 1.5 | Volts | |
| Drain-Source On-Resistance (RDS(on)) | VGS=4V, ID=10mA | 8 | Ω | ||
| Drain-Source On-Resistance (RDS(on)) | VGS=2.5V, ID=1mA | 13 | Ω | ||
| Forward Trans Conductance (gfs) | VDS=3V, ID=10mA | 20 | mS | ||
| Drain-Source Diode Forward Voltage (VSD) | IS=115mA, VGS=0V | 1.2 | V | ||
| Dynamic Characteristics | |||||
| Input Capacitance (Ciss) | VDS = 5V, VGS = 0V, f = 1.0MHz | 13 | pF | ||
| Output Capacitance (Coss) | VDS = 5V, VGS = 0V, f = 1.0MHz | 9 | pF | ||
| Reverse Transfer Capacitance (Crss) | VDS = 5V, VGS = 0V, f = 1.0MHz | 4 | pF | ||
| Switching Characteristics | |||||
| Turn-on Time (tD(on)) | VDD=5V, RL=500Ω, ID=10mA, VGs=5V, RG = 10Ω | 15 | nS | ||
| Turn-off Time (tD(off)) | VDD=5V, RL=500Ω, ID=10mA, VGs=5V, RG = 10Ω | 80 | nS | ||
2410121617_KUU-2SK3019_C2909905.pdf
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