Compact SOT223 Package Triac KEXIN BT131-800 with 800V Peak OffState Voltage and 1A RMS OnState Current
Key Attributes
Model Number:
BT131-800
Product Custom Attributes
Holding Current (Ih):
5mA
Current - Gate Trigger(Igt):
7mA
Voltage - On State(Vtm):
1.5V
Average Gate Power Dissipation (PG(AV)):
100mW
Current - On State(It(RMS)):
1A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
13.8A
Gate Trigger Voltage (Vgt):
1.5V
Mfr. Part #:
BT131-800
Package:
SOT-223
Product Description
Product Overview
The BT131 Series Thyristor SMD Type Triacs from Kexin are designed for general-purpose switching applications. They offer a compact SOT-223 package and are available with repetitive peak off-state voltage ratings of 600V (BT131-600) and 800V (BT131-800). With an RMS on-state current of 1A and a non-repetitive peak on-state current of 12.5A, these triacs are suitable for various power control and switching circuits.
Product Attributes
- Brand: Kexin
- Origin: China (implied by URL www.kexin.com.cn)
- Package Type: SOT-223
Technical Specifications
| Parameter | Symbol | BT131-600 | BT131-800 | Unit | Test Conditions |
| Repetitive Peak off-state Voltage | VDRM | 600 | 800 | V | IDRM=50A |
| RMS on-state Current | IT(RMS) | 1 | A | t=20ms | |
| Non-Repetitive Peak on-state Current | ITSM | 12.5 | A | t=16.7ms | |
| Circuit Fusing Considerations | I2t | 1.28 | As | t=10ms | |
| Peak Gate Current | IGM | 2 | A | ||
| Peak Gate Power | PGM | 5 | W | ||
| Average Gate Power | PG(AV) | 0.1 | W | ||
| Thermal Resistance Junction to Ambient | Rth j-a | 150 | C/W | *2 | |
| Junction Temperature | TJ | 125 | C | ||
| Storage Temperature Range | Tstg | -40 ~ 150 | C | ||
| Gate Trigger Voltage | VGT | 0.4 | 3 | V | VD=12V; IT=100mA; see Figure 4 |
| Gate Trigger Current | IGT | 1.3 | 5 | mA | VD=12V; IT=100mA; see Figure 4 |
| On-state Voltage | VT | 1.2 | 1.5 | V | IT=1.4A; see Figure 5 |
| Holding Current | IH | 1.3 | 5 | mA | VD=12V; IT=100mA; see Figure 6 |
| Latching Current | IL | 0.7 | 1.5 | mA | VD=12V; IT=100mA; see Figure 6 |
| Off-state Current | ID | 0.1 | 0.5 | mA | VD=VDRM(max); Tj=125C |
| Rate of Rise of off-state Voltage | dVD/dt | 10 | 20 | V/s | VDM=67% VDRM(max); Tj=125C; Exponential waveform; RGK=1k; see Figure 8 |
| Gate Controlled turn-on time | tgt | 2 | s | ITM=1.5A; VD=VDRM(max); IG=100mA; dIG/dt=5A/s | |
| Rate of Change of Commutating Current | dIcom/dt | 0.5 | A/ms | VDM=400V; Tj=125C | |
2410121917_KEXIN-BT131-800_C499617.pdf
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