High Density Cell P Channel MOSFET KUU KRU30L30M3 Featuring Excellent Heat Dissipation and Stability
Key Attributes
Model Number:
KRU30L30M3
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
35A
RDS(on):
10.5mΩ@20V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
2.8V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
245pF@15V
Number:
1 P-Channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
2.15nF@15V
Gate Charge(Qg):
40.3nC@10V
Mfr. Part #:
KRU30L30M3
Package:
PDFN-8L(3x3)
Product Description
Product Overview
This P-Channel MOSFET features a high-density cell design for ultra-low RDS(ON) and is fully characterized for avalanche voltage and current. It offers good stability and uniformity with high EAS, making it suitable for battery and loading switching applications. The package is designed for excellent heat dissipation.
Product Attributes
- Device Code: ME0D35AP
- Package: PDFN3X3-8L
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
| VDS | -30V P-Channel MOSFET | -30 | V | ||
| VGS | 25 V | V | |||
| EAS | 105 mJ | ||||
| TJ,TSTG | -55 to 150 C | ||||
| IS | Tc=25C -35 A | A | |||
| IDM | Tc=25C -160 A | A | |||
| ID | Tc=25C -35 A | A | |||
| PD | Tc=25C 35 W | W | |||
| RJA | Mounted on Large Heat Sink | 83 | C/W | ||
| BV(BR)DSS | Drain-Source Breakdown Voltage, VGS=0VID=-250A | -30 | V | ||
| IDSS | Zero Gate Voltage Drain Current, VDS=-25VVGS=0V | -1 | A | ||
| IGSS | Gate-Body Leakage Current, VGS=25VVDS=0V | 100 | nA | ||
| VGS(th) | Gate Threshold Voltage, VDS=VGSID=-250A | -1.2 | -1.7 | -2.8 | V |
| RDS(on) | Drain-Source On-State Resistance, VGS=-20VID=-12A | 7 | 10.5 | m | |
| RDS(on) | Drain-Source On-State Resistance, VGS=-10VID=-10A | 9.5 | 12.5 | m | |
| RDS(on) | Drain-Source On-State Resistance, VGS=-4.5VID=-8A | 13.8 | 20.8 | m | |
| CISS | Input Capacitance, VDS=-15VVGS=0V f=1MHz | 2150 | pF | ||
| COSS | Output Capacitance, VDS=-15VVGS=0V f=1MHz | 310 | pF | ||
| CRSS | Reverse Transfer Capacitance, VDS=-15VVGS=0V f=1MHz | 245 | pF | ||
| Qg | Total Gate Charge, VDD=-15VID=-1A VGS=-10VRG=2.5 | 40.3 | nC | ||
| Qgs | Gate Source Charge, VDD=-15VID=-1A VGS=-10VRG=2.5 | 8.5 | nC | ||
| Qgd | Gate Drain Charge, VDD=-15VID=-1A VGS=-10VRG=2.5 | 8.8 | nC | ||
| td(on) | Turn-on Delay Time, VDD=-15VID=-1A VGS=-10VRG=2.5 | 8.3 | nS | ||
| tr | Turn-on Rise Time, VDD=-15VID=-1A VGS=-10VRG=2.5 | 19.2 | nS | ||
| td(off) | Turn-Off Delay Time, VDD=-15VID=-1A VGS=-10VRG=2.5 | 75 | nS | ||
| tf | Turn-Off Fall Time, VDD=-15VID=-1A VGS=-10VRG=2.5 | 45 | nS | ||
| VSD | Forward on voltage, Tj=25Is=-12A | -1.2 | V |
2409302203_KUU-KRU30L30M3_C22467089.pdf
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