P Channel MOSFET KUU AO3415 with 20V Drain Source Voltage and 2kV Electrostatic Discharge Protection
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
5.6A
RDS(on):
42mΩ@4.5V,5A
Operating Temperature -:
-55℃~+150℃@(Tj)
Gate Threshold Voltage (Vgs(th)):
620mV@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
88pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.18nF@10V
Pd - Power Dissipation:
1.3W
Gate Charge(Qg):
11nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
The AO3415 is a SOT-23 P Channel MOS Field Effect Transistor designed for ESD protection. It offers a -20V Drain-Source Voltage and a continuous drain current of -5.6A at 25C. This device features integrated ESD protection up to 2.0 kV (HBM) and is suitable for various electronic applications requiring robust electrostatic discharge handling.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: ESD Protected Up to 2.0 kV (HBM)
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
| Drain-Source Breakdown Voltage | BVDSS | -20 | - | - | V | (ID = -250uA,VGS=0V) |
| Gate Threshold Voltage | VGS(th) | -0.4 | -0.62 | -1 | V | (ID = -250uA,VGS= VDS) |
| Zero Gate Voltage Drain Current | IDSS | - | - | 1 | uA | (VGS=0V, VDS= -20V) |
| Gate Body Leakage | IGSS | - | - | +15 | uA | (VGS=+10V, VDS=0V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 31 | 41 | m | (ID= -5A,VGS= -4.5V) |
| (ID= -4A,VGS= -2.5V) | ||||||
| Diode Forward Voltage Drop | VSD | - | - | -1.2 | V | (ISD= -5A,VGS=0V) |
| Input Capacitance | CISS | - | 1180 | - | pF | (VGS=0V, VDS= -10V,f=1MHz) |
| Common Source Output Capacitance | COSS | - | 125 | - | pF | (VGS=0V, VDS= -10V,f=1MHz) |
| Reverse Transfer Capacitance | CRSS | - | 88 | - | pF | (VGS=0V, VDS= -10V,f=1MHz) |
| Total Gate Charge | Qg | - | 11 | - | nC | (VDS= -10V, ID= -4A, VGS= -4.5V) |
| Gate Source Charge | Qgs | - | 2 | - | nC | (VDS= -10V, ID= -4A, VGS= -4.5V) |
| Gate Drain Charge | Qgd | - | 3 | - | nC | (VDS= -10V, ID= -4A, VGS= -4.5V) |
| Turn-ON Delay Time | td(on) | - | 14 | - | ns | (VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V) |
| Turn-ON Rise Time | tr | - | 10 | - | ns | (VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V) |
| Turn-OFF Delay Time | td(off) | - | 20 | - | ns | (VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V) |
| Turn-OFF Fall Time | tf | - | 30 | - | ns | (VDS= -10V ID= -1A, RGEN=2.5,VGS= -4.5V) |
2410121543_KUU-AO3415_C5372708.pdf
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