Power management and load switch applications powered by KUU K60P25K P channel MOSFET featuring ultra low RDS

Key Attributes
Model Number: K60P25K
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
25A
RDS(on):
53mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
75pF
Pd - Power Dissipation:
80W
Output Capacitance(Coss):
96pF
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
K60P25K
Package:
TO-252
Product Description

Product Overview

The K60P25K is a P-channel MOSFET featuring a high-density cell design for ultra-low RDS(ON), fully characterized avalanche voltage and current, and an excellent package for good heat dissipation. It is suitable for PWM applications, power management, and load switch functions.

Product Attributes

  • Device Code: MU0G25AP
  • Package: TO-252

Technical Specifications

ParameterConditionMinTypMaxUnit
Absolute Maximum Ratings
VDS-60V
VGS±20V
TJ150°C
TSTG-55150°C
ISTc=25°C-25A
IDMTc=25°C-110A
IDTc=25°C-25A
PDTA=25°C80W
RθJAMounted on Large Heat Sink50°C/W
Common Ratings
BV(BR)DSSVGS=0V, ID=-250μA-60V
IDSSVDS=-60V, VGS=0V-1μA
IGSSVGS=±20V, VDS=0V±100nA
VGS(th)VDS=VGS, ID=-250μA-1.0-1.7-2.5V
RDS(on)VGS=-10V, ID=-20A4353
RDS(on)VGS=-4.5V, ID=-10A5070
CISSVDS=-30V, VGS=0V, f=1MHz1650pF
COSSVDS=-30V, VGS=0V, f=1MHz95pF
CRSSVDS=-30V, VGS=0V, f=1MHz75pF
QgVDS=-30V, ID=-9A, VGS=-10V30nC
QgsVDS=-30V, ID=-9A, VGS=-10V3.5nC
QgdVDS=-30V, ID=-9A, VGS=-10V7.7nC
td(on)VDD=-30V, ID=-20A, VGS=-10V, RG=3Ω11nS
trVDD=-30V, ID=-20A, VGS=-10V, RG=3Ω14nS
td(off)VDD=-30V, ID=-20A, VGS=-10V, RG=3Ω33nS
tfVDD=-30V, ID=-20A, VGS=-10V, RG=3Ω13nS
VSDTj=25°C, Is=-20A-1.2V

2412301735_KUU-K60P25K_C42429362.pdf
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