KIA Semicon Tech KND7N65B 7A 650V N Channel Planar MOSFET Suitable for Power Conversion Applications
Key Attributes
Model Number:
KND7N65B
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
9pF
Input Capacitance(Ciss):
1.1nF
Output Capacitance(Coss):
80pF
Pd - Power Dissipation:
126W
Gate Charge(Qg):
18nC@10V
Mfr. Part #:
KND7N65B
Package:
TO-252
Product Description
Product Overview
The 7N65B is a 7A, 650V N-CHANNEL PLANAR MOSFET from KMOS Semiconductor. It features an advanced planar process, low gate charge for minimized switching loss, and a fast recovery body diode. This MOSFET is suitable for applications such as adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KIA
- Part Number: KND7N65B
- Package: TO-252
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Electrical Characteristics | BVDSS | VGS=0V, ID=250uA | 650 | - | - | V |
| IDSS | VDS=650V, VGS=0V | - | - | 1 | uA | |
| IDSS (TJ=125C) | VDS=520V, VGS=0V | - | - | 100 | uA | |
| Electrical Characteristics | IGSS | VGS=30V, VDS=0V | - | - | 100 | nA |
| RDS(ON) | VGS=10V, ID=3.5A | - | 1.2 | 1.4 | ||
| VGS(TH) | VDS=VGS,ID=250uA | 2.0 | - | 4.0 | V | |
| Electrical Characteristics | gfs | VDS=30V,ID=3.5A | - | 11 | - | S |
| Ciss | VGS=0V,VDS=25V, f=1.0MHZ | - | 1100 | - | pF | |
| Coss | - | - | 80 | - | pF | |
| Electrical Characteristics | Crss | - | - | 9 | - | pF |
| Qg | VDD=325V,ID=7A, VGS=0 to 10V | - | 18 | - | nC | |
| Qgs | - | - | 4 | - | - | |
| Electrical Characteristics | Qgd | - | - | 4 | - | - |
| td(ON) | VDD=325V, ID=7A, RG=4.7,VGS=10V | - | 10 | - | nS | |
| trise | - | - | 10 | - | - | |
| Electrical Characteristics | td(OFF) | - | - | 16 | - | - |
| tfall | - | - | 9 | - | - | |
| ISD | - | - | - | 7.0 | A | |
| Electrical Characteristics | ISM | - | - | - | 28 | A |
| VSD | IS=7A, VGS=0V | - | - | 1.5 | V | |
| trr | IF=7A, VGS=0V, di/dt=100A/us | - | 350 | - | ns | |
| Electrical Characteristics | Qrr | - | - | 1.1 | - | uC |
| Absolute Maximum Ratings | VDSS | - | 650 | - | - | V |
| Absolute Maximum Ratings | VGSS | - | 30 | - | - | V |
| Absolute Maximum Ratings | ID | - | 7.0 | - | - | A |
| Absolute Maximum Ratings | IDM | - | 28 | - | - | A |
| Absolute Maximum Ratings | EAS | - | 550 | - | - | mJ |
| Absolute Maximum Ratings | PD | - | 126 | - | - | W |
| Absolute Maximum Ratings | PD Derating | above 25C | - | 1.0 | - | W/C |
| Absolute Maximum Ratings | TL (Leads) | 10 seconds | - | 300 | - | C |
| Absolute Maximum Ratings | TL (Body) | 10 seconds | - | 260 | - | C |
| Absolute Maximum Ratings | TJ&TSTG | - | -55 | - | 150 | C |
| Thermal Characteristics | RJC | - | - | 0.99 | - | C/W |
| Thermal Characteristics | RJA | - | - | 75 | - | C/W |
2509041415_KIA-Semicon-Tech-KND7N65B_C51883052.pdf
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