Power MOSFET JUXING 30N06 N Channel Mode Suitable for High Frequency and Uninterruptible Power Supply
Key Attributes
Model Number:
30N06
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
24mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.1V@250uA
Type:
N-Channel
Number:
1 N-channel
Pd - Power Dissipation:
1.25W
Mfr. Part #:
30N06
Package:
TO-252
Product Description
Product Overview
The 30N06 is an N-Channel Mode Power MOSFET designed for ultra low RDS(ON) with a hard density cell design. It is suitable for hard switched and high frequency circuits, as well as uninterruptible power supply applications.
Product Attributes
- Brand: XXXX (implied by Product ID)
- Origin: Not specified
- Material: Not specified
- Color: Not specified
- Certifications: Not specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Maximum Ratings | VDS | Drain-Source Voltage | 60 | V | ||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current | 30 | A | |||
| IDM | Pulsed Drain Current | 80 | A | |||
| PD | Power Dissipation | (Ta=25) | 1.25 | W | ||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V,ID=250µA) | 60 | V | ||
| IDSS | Zero Gate Voltage Drain Current (VDS=60V,VGS=0V) | 100 | nA | |||
| IGSS | Gate-Body Leakage Current (VDS=0V,VGS=±20V) | ±100 | nA | |||
| On Characteristics | VGS(th) | Gate-Threshold Voltage (VDS=VGS,ID=250µA) | 1.1 | 2.1 | V | |
| RDS(on) | (VGS=10V,ID=1.0A) | 12 | 15 | mΩ | ||
| RDS(on) | (VGS=4.5V,ID=1.0A) | 17 | 24 | mΩ | ||
| Drain-Source Diode Characteristics | VSD | Drain-Source Diode Forward Voltage (VGS=0V,IS=10A) | 1.2 | V | ||
| IS | Continuous Drain-Source Diode Forward Current | 30 | A | |||
| Thermal Characteristics | Tj | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55 | 150 | |||
| RθJA | Thermal Resistance From Junction To Ambient | 100 | /W | |||
| RθJC | Thermal Resistance From Junction To Case | 2.6 | /W |
Package Information
Package: TO-252
Package Marking and Ordering Information:
- Product ID: 30N06
- Package: TO-252
- Qty (pcs): 2500
Website: http://www.trr-jx.com
2409302301_JUXING-30N06_C22440677.pdf
Related Products
DO 214AC SMA package SMA4742AQ Zener diode with low profile design and high forward surge capability
Product OverviewThe SMA4735AQ thru SMA4764AQ series are surface mount Zener diodes featuring a low profile package ideal for automated placement. They offer high forward surge capability and meet MSL level 1 standards. The 'Q' suffix indicates AEC-Q101 qualification, making them suitable for ...
N channel Power MOSFET XTX BRT40N210P2 with 840A Pulsed Drain Current and Enhanced Trench Technology
Product OverviewThe BRT40N210P2 is an N-channel Enhancement Mode Power MOSFET from XTX Technology Inc. It features advanced trench technology, offering excellent RDS(ON) and low gate charge. This MOSFET is suitable for load switch, PWM applications, and power management scenarios.Product AttributesB...
Power Management and Motor Drive Applications Featuring YANGJIE YJD90N06A N Channel MOSFET Transistor
Product OverviewThe YJD90N06A is an N-Channel Enhancement Mode Field Effect Transistor featuring Trench Power MV MOSFET technology. It offers excellent heat dissipation and a high-density cell design for low RDS(ON). This transistor is suitable for DC-DC converters, power management functions, and ...
Digital Transistor YANGJIE UMH11N Dual NPN Type with Built In Bias Resistors and Surface Mount Design
Product OverviewThe UMH11N is a dual NPN digital transistor featuring built-in bias resistors, allowing for inverter circuit configuration without external input resistors. It is designed for surface mount applications and is ideally suited for automatic insertion. The epoxy meets UL-94 V-0 ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
