Compact SOT-23 N-Channel Enhancement Mode Power MOSFET JUXING SI2301S for Portable Devices and DC DC Converters
Key Attributes
Model Number:
SI2301S
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
2.3A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
90mΩ@4.5V,2.8A
Gate Threshold Voltage (Vgs(th)):
700mV
Reverse Transfer Capacitance (Crss@Vds):
55pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
405pF@10V
Pd - Power Dissipation:
400mW
Mfr. Part #:
SI2301S
Package:
SOT-23
Product Description
Product Overview
This N-Channel Enhancement Mode Power MOSFET, designed for portable devices and DC/DC converters, features TrenchFET technology for efficient load switching. Packaged in a compact SOT-23, it offers a robust solution for various electronic applications.
Product Attributes
- Package: SOT-23
- Epoxy UL Flammability Rating: 94V-0
- Mounting Position: Any
Technical Specifications
| Parameters | Symbol | Test Condition | Min | Typ | Max | Unit |
| Maximum Ratings & Thermal Characteristics (TA = 25 unless otherwise specified) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | -2.3 | A | |||
| Pulsed Drain Current | IDM | -10 | A | |||
| Continuous Source-Drain Diode Current | IS | -0.72 | A | |||
| Power Dissipation | PD | 400 | mW | |||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature | Tstg | -50 | +150 | |||
| Thermal Resistance From Junction to Ambient | RJA | 312.5 | /W | |||
| Electrical Characteristics (TA = 25 unless otherwise specified) | ||||||
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250uA | -20 | V | ||
| Gate-Threshold voltage | V GS (th) | VDS=VGS, ID=-250uA | -0.4 | -0.7 | -1.0 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=±8V | ±100 | nA | ||
| Zero Gate Voltage Drain current | IDSS | VDS=-20V, VGS=0V | -1 | uA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-2.8A | 90 | 112 | m | |
| VGS=-2.5V, IC=-2A | 110 | 142 | m | |||
| Forward trans conductance | gfs | VDS=-5V, ID=-2.8A | 6.5 | S | ||
| Dynamic (b) | ||||||
| Input capacitance | Ciss | VDS=-10V, VGS=0V,f=1MHz | 405 | pF | ||
| Output capacitance | Coss | 75 | pF | |||
| Reverse Transfer capacitance | Crss | 55 | pF | |||
| Total gate charge | Qg | VDS=-10V, VGS=-4.5V,ID=-3A | 5.5 | 10 | nC | |
| Gate-source charge | Qgs | 3.3 | 6 | nC | ||
| Gate-drain charge | Qg | VDS=-10V, VGS=-2.5V,ID=-3A | 0.7 | 1.3 | nC | |
| Gate resistance | Rg | F=1MHz | 6.0 | |||
| Turn-on Time | td(on) | VDD=-10V, RL=10, VGEN=-4.5V, ID=-1A, RG=1 | 11 | 20 | ns | |
| Rise time | tr | 35 | 60 | ns | ||
| Turn-off Time | td(off) | 30 | 50 | ns | ||
| Fall time | tf | 10 | 20 | ns | ||
| Drain-source body diode characteristics | ||||||
| Continuous source-drain diode current | IS | Tc=25 | -0.72 | A | ||
| Pulse diode forward current | ISM | (a) | -10 | A | ||
| Body diode voltage | VSD | IS=-0.7A | -0.8 | -1.2 | V | |
2411220336_JUXING-SI2301S_C5356027.pdf
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