N Channel MOSFET KUU SI2306 30V Featuring TrenchFET Technology for Load Switching and DC DC Converter
Key Attributes
Model Number:
SI2306
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.5A
RDS(on):
90mΩ@4.5V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
29pF
Number:
1 N-channel
Output Capacitance(Coss):
65pF
Input Capacitance(Ciss):
305pF
Pd - Power Dissipation:
750mW
Gate Charge(Qg):
4.5nC@4.5V
Mfr. Part #:
SI2306
Package:
SOT-23-3L
Product Description
Product Overview
The SI2306 is an N-Channel 30V (D-S) MOSFET featuring TrenchFET technology. It offers low on-state resistance at various gate voltages (65m@10V, 90m@4.5V) and a continuous drain current of 3.5A. This MOSFET is designed for applications such as load switching in portable devices and DC/DC converters.
Product Attributes
- Brand: Not Specified
- Origin: Not Specified
- Material: Not Specified
- Color: Not Specified
- Certifications: Not Specified
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Drain-Source Voltage | VDS | VGS = 0V, ID = 250A | 30 | V | ||
| Gate-Source Voltage | VGS | 20 | V | |||
| Continuous Drain Current | ID | 3.5 | A | |||
| Pulsed Diode Current | IDM | 20 | A | |||
| Continuous Source-Drain Current(Diode Conduction) | IS | 0.8 | A | |||
| Power Dissipation | PD | Ta=25 | 0.75 | W | ||
| Thermal Resistance from Junction to Ambient (t5s) | RJA | 150 | /W | |||
| Operating Junction Temperature | TJ | 150 | ||||
| Storage Temperature | TSTG | -55 | +150 | |||
| Gate-Source Threshold Voltage | VGS(th) | VDS =VGS, ID = 250A | 1 | 3 | V | |
| Gate-Source Leakage | IGSS | VDS =0V, VGS = 20V | 100 | nA | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 30V, VGS =0V | 1 | A | ||
| Drain-Source On-State Resistance | RDS(on) | VGS = 10V, ID = 3.5A | 40 | 65 | m | |
| Drain-Source On-State Resistance | RDS(on) | VGS = 4.5V, ID = 2.8A | 53 | 90 | m | |
| Forward Transconductance | gfs | VDS = 4.5V, ID = 3.5A | 7 | S | ||
| Diode Forward Voltage | VSD | IS= 1.25A,VGS=0V | 0.8 | 1.3 | V | |
| Input Capacitance | Ciss | VDS = 15V,VGS = 0V, f=1MHz | 305 | pF | ||
| Output Capacitance | Coss | VDS = 15V,VGS = 0V, f=1MHz | 65 | pF | ||
| Reverse Transfer Capacitance | Crss | VDS = 15V,VGS = 0V, f=1MHz | 29 | pF | ||
| Total Gate Charge | Qg | VDS = 18V,VGS = 4.5V, ID = 3.5A | 3 | 4.5 | nC | |
| Gate-Source Charge | Qgs | VDS = 18V,VGS = 4.5V, ID = 3.5A | 1.6 | nC | ||
| Gate-Drain Charge | Qgd | VDS = 18V,VGS = 4.5V, ID = 3.5A | 0.6 | nC | ||
| Gate Resistance | Rg | f=1MHz | 5 | |||
| Turn-on Delay Time | td(on) | VDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=6 | 7 | 11 | ns | |
| Rise Time | tr | VDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=6 | 12 | 18 | ns | |
| Turn-off Delay Time | td(off) | VDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=6 | 14 | 25 | ns | |
| Fall Time | tf | VDD= 10V RL=10, ID 3A, VGEN= 4.5V,Rg=6 | 6 | 10 | ns | |
| Continuous Source-Drain Diode Current | IS | Tc=25 | 1.3 | A | ||
| Pulsed Diode Forward Current | ISM | 20 | A |
2410010101_KUU-SI2306_C2909908.pdf
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