Power Switching MOSFET JUXING 7N65 N Channel 650V 7A TO 252 Package for DC DC Converter Applications
Key Attributes
Model Number:
7N65
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
7A
RDS(on):
1.52Ω@10V
Operating Temperature -:
-45℃~+125℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
-
Pd - Power Dissipation:
50W
Gate Charge(Qg):
-
Mfr. Part #:
7N65
Package:
TO-252
Product Description
Product Overview
The 7N65 is an N-Channel Mode Power MOSFET designed for power switching applications and DC/DC converters. It offers a high current rating, lower RDS(ON), and fast switching capability, making it suitable for demanding power applications.
Product Attributes
- Product ID: 7N65
- Package: TO-252
- Ordering Information: 7N65 in TO-252 package, 2500 pcs per quantity
- Website: http://www.trr-jx.com
- Version: 01
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings | VDS | Drain-Source Voltage | 650 | V | ||
| VGS | Gate-Source Voltage | ±30 | V | |||
| ID | Continuous Drain Current | (Ta=25) | 7.0 | A | ||
| IDM | Pulsed Drain Current | 29.6 | A | |||
| EAS | Single Pulsed Avalanche Energy | 500 | mJ | |||
| PD | Power Dissipation | (Ta=25) | 50 | W | ||
| Electrical Characteristics | V(BR)DSS | Drain-Source Breakdown Voltage (VGS=0V, ID=250µA) | 650 | V | ||
| VSD | Drain-Source Diode Forward Voltage (VGS=0V, IS=7.0A) | 1.4 | V | |||
| IDSS | Zero Gate Voltage Drain Current (VDS=650V, VGS=0V) | 1 | µA | |||
| IGSS | Gate-Body Leakage Current (VDS=0V, VGS=±30V) | ±100 | nA | |||
| On Characteristics | VGS(th) | Gate-Threshold Voltage (VDS=VGS, ID=250µA) | 2.0 | 3.2 | 4.0 | V |
| RDS(on) | (VGS=10V, ID=1.0A) | 1.25 | 1.52 | Ω | ||
| Non-triggering Gate Voltage | ||||||
| Thermal Characteristics | RθJA | Thermal Resistance From Junction To Ambient | 62.5 | /W | ||
| RθJC | Thermal Resistance From Junction To Case | 2.5 | /W | |||
| Temperature Ratings | Tj | Junction Temperature | -45 | 125 | ||
| Tstg | Storage Temperature |
2409302301_JUXING-7N65_C22440672.pdf
Related Products
Small signal Zener diode YANGJIE MMSZ5229BQ epoxy UL94 V0 flammability rating with tin leads
Product OverviewThe MMSZ5221BQ THRU MMSZ5261BQ series are small signal Zener diodes designed for general regulation functions. These diodes feature epoxy that meets UL-94 V-0 flammability rating and is halogen-free, with a Moisture Sensitivity Level 1. They offer Zener voltages ranging from 2.4V to ...
IGBT power module YANGJIE MG10P12P3 optimized for motor drivers AC DC servo drives and UPS systems
Product OverviewThe MG10P12P3 S-M452 is a high-performance IGBT module designed for demanding applications such as motor drivers, AC/DC servo drive amplifiers, and Uninterruptible Power Supplies (UPS). It features low switching losses, low VCE(sat), a positive temperature coefficient, and an ...
Silicon Carbide Power MOSFET YANGJIE YJD212040NCFG2 Designed for Fast Switching and High Temperature
Product OverviewThe YJD212040NCFG2 is a Silicon Carbide Power MOSFET (N-Channel Enhancement) designed for high-speed switching applications. It offers essentially no switching losses, reduced heat sink requirements, and a maximum working temperature of 175 C. Key features include high blocking ...
High speed switching transistor YANGJIE DGP15N65CTL designed for hard and soft switching applications
Product OverviewThe DGP15N65CTL0 is a high-speed smooth switching IGBT discrete device designed for hard and soft switching applications. It features a maximum junction temperature of 175, a positive temperature coefficient, and high ruggedness with temperature stability. This IGBT is suitable for ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
