Power MOSFET 130A 40V N Channel KIA Semicon Tech KNP2904A with Low On Resistance and Fast Switching
Key Attributes
Model Number:
KNP2904A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
130A
RDS(on):
2.5mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.5V
Reverse Transfer Capacitance (Crss@Vds):
570pF
Output Capacitance(Coss):
580pF
Input Capacitance(Ciss):
6.26nF
Pd - Power Dissipation:
328W
Gate Charge(Qg):
135nC@10V
Mfr. Part #:
KNP2904A
Package:
TO-220
Product Description
Product Overview
The KIA SEMICONDUCTORS 2904A is a 130A, 40V N-CHANNEL MOSFET designed for high-efficiency power management applications. It features very low on-resistance (RDS(ON)), low Crss, and fast switching capabilities, making it ideal for PWM applications and load switching. The device is 100% avalanche tested and offers improved dv/dt capability.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Series: 2904A
- Channel Type: N-CHANNEL
- Voltage Rating: 40V
- Current Rating: 130A
- Revision: 1.3
- Publication Date: Nov. 2024
Technical Specifications
| Parameter | Symbol | DFN5*6 | TO-252 | TO-263 | TO-220 | Unit | Test Conditions |
| Drain-source breakdown voltage | BVDSS | 40 | V | VGS=0V,ID=250uA | |||
| Gate-source breakdown voltage | VGSS | 20 | V | ||||
| Continuous drain current | ID | 130 (TC=25C), 84 (TC=100C) | A | ||||
| Pulsed Drain Current | IDM | 400 | A | VGS=10V | |||
| Single pulse avalanche energy | EAS | 250 | mJ | TJ=25C, VDD=20V, VG=10V, RG=25, L=0.5mH | |||
| Power dissipation | PD | 54 | 130 | 328 | W | TC=25C | |
| Thermal resistance junction-case | RJC | 2.3 | 0.96 | 0.38 | C/W | ||
| Gate threshold voltage | VGS(TH) | 1.0 - 2.3 | V | VDS=VGS,ID=250uA | |||
| Drain-source on-resistance | RDS(on) | 2.0 - 2.7 (typ. 2.0) | 2.5 - 3.2 (typ. 2.5) | 2.5 - 3.2 (typ. 2.5) | m | VGS=10V, ID=20A | |
| Drain-source on-resistance | RDS(on) | 2.6 - 3.5 (typ. 2.6) | 3.1 - 4.2 (typ. 3.1) | 3.1 - 4.2 (typ. 3.1) | m | VGS=4.5V, ID=15A | |
| Input capacitance | Ciss | 6260 | pF | VDS=15V,VGS=0V f=1MHz | |||
| Output capacitance | Coss | 580 | pF | VDS=15V,VGS=0V f=1MHz | |||
| Reverse transfer capacitance | Crss | 570 | pF | VDS=15V,VGS=0V f=1MHz | |||
| Turn-on delay time | td(on) | 18 | ns | VGS=10V, VDS=20V, RL=3, ID=10A TJ=25C | |||
| Rise time | tr | 20 | ns | VGS=10V, VDS=20V, RL=3, ID=10A TJ=25C | |||
| Turn-off delay time | td(off) | 50 | ns | VGS=10V, VDS=20V, RL=3, ID=10A TJ=25C | |||
| Fall time | tf | 16 | ns | VGS=10V, VDS=20V, RL=3, ID=10A TJ=25C | |||
| Total gate charge | Qg | 135 | nC | VDS=15V, ID=20A VGS=10V | |||
| Gate-source charge | Qgs | 30 | nC | VDS=15V, ID=20A VGS=10V | |||
| Gate-drain charge | Qg d | 19 | nC | VDS=15V, ID=20A VGS=10V | |||
| Maximum Continuous Drain-Source Diode Forward Current | IS | 130 | A | ||||
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | 400 | A | ||||
| Drain to Source Diode Forward Voltage | VSD | 1.2 | V | ISD=20A,VGS=0V, TJ=25C | |||
2508261745_KIA-Semicon-Tech-KNP2904A_C7465107.pdf
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