P Channel Enhancement MOSFET JUXING AO3415 Featuring Low Gate Voltage and UL 94V 0 Rated SOT 23 Package
Key Attributes
Model Number:
AO3415
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4A
RDS(on):
73mΩ@1.8V,2A
Operating Temperature -:
-50℃~+150℃
Gate Threshold Voltage (Vgs(th)):
300mV
Reverse Transfer Capacitance (Crss@Vds):
160pF@10V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.45nF@10V
Pd - Power Dissipation:
350mW
Gate Charge(Qg):
17.2nC@4.5V
Mfr. Part #:
AO3415
Package:
SOT-23
Product Description
Product Overview
This P-CHANNEL ENHANCEMENT MOSFET (AO3415) offers excellent RDS(ON), low gate charge, and low gate voltages. It is suitable for load switch and PWM applications. The device comes in a SOT-23 package and is UL 94V-0 rated for flammability.
Product Attributes
- Brand: Not specified
- Origin: Not specified
- Material: Plastic
- Color: Not specified
- Certifications: Epoxy UL: 94V-0
- Package: SOT-23
- Mounting Position: Any
Technical Specifications
| Parameter | Symbol | Test Condition | Min | Typ | Max | Unit |
| Static Drain-Source Breakdown Voltage | V(BR)DSS | VGS=0V, ID=-250uA | -20 | V | ||
| VGS=0V, ID=-250uA | -20 | V | ||||
| VGS=0V, ID=-250uA | -20 | V | ||||
| VGS=0V, ID=-250uA | -20 | V | ||||
| Gate-Threshold voltage | V GS (th) | VDS=VGS, ID=-250uA | -0.3 | -0.56 | -1.0 | V |
| Gate-body Leakage | IGSS | VDS=0V, VGS=8V | 10 | uA | ||
| Zero Gate Voltage Drain current | IDSS | VDS=-16V, VGS=0V | -1 | uA | ||
| Drain-Source On-Resistance | RDS(ON) | VGS=-4.5V, ID=-4A | 37 | 50 | m | |
| VGS=-2.5V, IC=-4A | 45 | 60 | m | |||
| VGS=-1.8V, IC=-2A | 56 | 73 | m | |||
| Forward trans conductance | gfs | VDS=-5V, ID=-4A | 8 | S | ||
| Capacitance | Ciss, Coss, Crss | VDS=-10V, VGS=0V,f=1MHz | 1450, 205, 160 | pF | ||
| VDS=-10V, VGS=0V,f=1MHz | 1450, 205, 160 | pF | ||||
| VDS=-10V, VGS=0V,f=1MHz | 1450, 205, 160 | pF | ||||
| Charge | Qg, Qgs, Qgd | VDS=-10V, VGS=-4.5V,ID=-4A | 17.2, 1.3, 4.5 | nC | ||
| VDS=-10V, VGS=-4.5V,ID=-4A | 17.2, 1.3, 4.5 | nC | ||||
| VDS=-10V, VGS=-4.5V,ID=-4A | 17.2, 1.3, 4.5 | nC | ||||
| Gate resistance | Rg | VDS=0V, VGS=0V,f =1MHz | 6.5 | |||
| Switching Time | td(on), tr, td(off), tf | VDD=-10V, RL=2.5, VGEN=-4.5V, RGEN=3 | 9.5, 17, 94, 35 | ns | ||
| VDD=-10V, RL=2.5, VGEN=-4.5V, RGEN=3 | 9.5, 17, 94, 35 | ns | ||||
| VDD=-10V, RL=2.5, VGEN=-4.5V, RGEN=3 | 9.5, 17, 94, 35 | ns | ||||
| VDD=-10V, RL=2.5, VGEN=-4.5V, RGEN=3 | 9.5, 17, 94, 35 | ns | ||||
| Body diode voltage | VSD | IS=-1A, VGS=0V | -1.0 | V | ||
2411220257_JUXING-AO3415_C5243889.pdf
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