load switching and battery protection using KUU AO4805 P channel Trench Power LV MOSFET with low RDS
Key Attributes
Model Number:
AO4805
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-40℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 N-channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
2.8nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
AO4805
Package:
SOP-8
Product Description
Product Overview
The AO4805 is a P-channel Trench Power LV MOSFET featuring a high-density cell design for low RDS(ON). It is designed for applications such as battery protection, power management, and load switching, offering high-speed switching capabilities.
Product Attributes
- Brand: Yongyutai (implied by website)
- Model: AO4805
- Technology: Trench Power LV MOSFET
- Package: SOP-8
Technical Specifications
| Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Drain-Source Breakdown Voltage (VDS) | VGS=0V, ID=-250A | -30 | -- | -- | V |
| Zero Gate Voltage Drain Current (IDSS) | VDS=-30V, VGS=0V | -- | -- | -1.0 | uA |
| Gate-Body Leakage Current (IGSS) | VGS=20V, VDS=0V | -- | -- | 100 | nA |
| Gate Threshold Voltage (VGS(th)) | VDS=VGS, ID=-250A | -1.0 | -1.5 | -2.2 | V |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-20V, ID=-9A | -- | 11 | 15 | m |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-10V, ID=-8A | -- | 12 | 18 | m |
| Drain-Source On-State Resistance (RDS(on)) | VGS=-4.5V, ID=-5A | -- | 16.5 | -- | m |
| Input Capacitance (CISS) | VDS=-15V, VGS=0V, f=1MHz | -- | 2800 | -- | pF |
| Output Capacitance (COSS) | VDS=-15V, VGS=0V, f=1MHz | -- | 350 | -- | pF |
| Reverse Transfer Capacitance (CRSS) | VDS=-15V, VGS=0V, f=1MHz | -- | 300 | -- | pF |
| Total Gate Charge (Qg) | VDD=-15V, ID=-15A, VGS=-10V | -- | 30 | -- | nC |
| Gate Source Charge (Qgs) | VDD=-15V, ID=-15A, VGS=-10V | -- | 5.5 | -- | nC |
| Gate Drain Charge (Qgd) | VDD=-15V, ID=-15A, VGS=-10V | -- | 7.5 | -- | nC |
| Turn-on Delay Time (td(on)) | VDD=-15V, ID=-15A, VGS=-10V, RG=2.5 | -- | 13 | -- | nS |
| Turn-on Rise Time (tr) | VDD=-15V, ID=-15A, VGS=-10V, RG=2.5 | -- | 20 | -- | nS |
| Turn-Off Delay Time (td(off)) | VDD=-15V, ID=-15A, VGS=-10V, RG=2.5 | -- | 90 | -- | nS |
| Turn-Off Fall Time (tf) | VDD=-15V, ID=-15A, VGS=-10V, RG=2.5 | -- | 65 | -- | nS |
| Source- Drain Diode Characteristics (VSD) | Tj=25, Is=-1A | -- | -- | -1.2 | V |
| Common Ratings | |||||
| Gate-Source Voltage (VGS) | -- | -- | 20 | V | |
| Maximum Junction Temperature (TJ) | -- | -- | 150 | C | |
| Storage Temperature Range (TSTG) | -50 | -- | 155 | C | |
| Diode Continuous Forward Current (IS) | Tc=25C | -- | -- | -9 | A |
| Pulse Drain Current (IDM) | Tc=25C | -- | -- | -42 | A |
| Tested Continuous Drain Current (ID) | Tc=25C | -- | -- | -9 | A |
| Thermal Resistance Junction-Ambient (RJA) | Mounted on Large Heat Sink (1 in2 Pad of 2-oz Copper), Max. | -- | -- | 62 | C/W |
| Maximum Power Dissipation (PD) | TA=25 | -- | -- | -- | W |
2411071052_KUU-AO4805_C42377649.pdf
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