load switching and battery protection using KUU AO4805 P channel Trench Power LV MOSFET with low RDS

Key Attributes
Model Number: AO4805
Product Custom Attributes
Drain To Source Voltage:
30V
Configuration:
-
Current - Continuous Drain(Id):
9A
Operating Temperature -:
-40℃~+150℃
RDS(on):
18mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
300pF
Number:
1 N-channel
Output Capacitance(Coss):
350pF
Input Capacitance(Ciss):
2.8nF
Pd - Power Dissipation:
3W
Gate Charge(Qg):
30nC@10V
Mfr. Part #:
AO4805
Package:
SOP-8
Product Description

Product Overview

The AO4805 is a P-channel Trench Power LV MOSFET featuring a high-density cell design for low RDS(ON). It is designed for applications such as battery protection, power management, and load switching, offering high-speed switching capabilities.

Product Attributes

  • Brand: Yongyutai (implied by website)
  • Model: AO4805
  • Technology: Trench Power LV MOSFET
  • Package: SOP-8

Technical Specifications

ParameterConditionMinTypMaxUnit
Absolute Maximum Ratings
Drain-Source Breakdown Voltage (VDS)VGS=0V, ID=-250A-30----V
Zero Gate Voltage Drain Current (IDSS)VDS=-30V, VGS=0V-----1.0uA
Gate-Body Leakage Current (IGSS)VGS=20V, VDS=0V----100nA
Gate Threshold Voltage (VGS(th))VDS=VGS, ID=-250A-1.0-1.5-2.2V
Drain-Source On-State Resistance (RDS(on))VGS=-20V, ID=-9A--1115m
Drain-Source On-State Resistance (RDS(on))VGS=-10V, ID=-8A--1218m
Drain-Source On-State Resistance (RDS(on))VGS=-4.5V, ID=-5A--16.5--m
Input Capacitance (CISS)VDS=-15V, VGS=0V, f=1MHz--2800--pF
Output Capacitance (COSS)VDS=-15V, VGS=0V, f=1MHz--350--pF
Reverse Transfer Capacitance (CRSS)VDS=-15V, VGS=0V, f=1MHz--300--pF
Total Gate Charge (Qg)VDD=-15V, ID=-15A, VGS=-10V--30--nC
Gate Source Charge (Qgs)VDD=-15V, ID=-15A, VGS=-10V--5.5--nC
Gate Drain Charge (Qgd)VDD=-15V, ID=-15A, VGS=-10V--7.5--nC
Turn-on Delay Time (td(on))VDD=-15V, ID=-15A, VGS=-10V, RG=2.5--13--nS
Turn-on Rise Time (tr)VDD=-15V, ID=-15A, VGS=-10V, RG=2.5--20--nS
Turn-Off Delay Time (td(off))VDD=-15V, ID=-15A, VGS=-10V, RG=2.5--90--nS
Turn-Off Fall Time (tf)VDD=-15V, ID=-15A, VGS=-10V, RG=2.5--65--nS
Source- Drain Diode Characteristics (VSD)Tj=25, Is=-1A-----1.2V
Common Ratings
Gate-Source Voltage (VGS)----20V
Maximum Junction Temperature (TJ)----150C
Storage Temperature Range (TSTG)-50--155C
Diode Continuous Forward Current (IS)Tc=25C-----9A
Pulse Drain Current (IDM)Tc=25C-----42A
Tested Continuous Drain Current (ID)Tc=25C-----9A
Thermal Resistance Junction-Ambient (RJA)Mounted on Large Heat Sink (1 in2 Pad of 2-oz Copper), Max.----62C/W
Maximum Power Dissipation (PD)TA=25------W

2411071052_KUU-AO4805_C42377649.pdf

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