High speed switching N CHANNEL MOSFET KIA Semicon Tech KNL42150A with TO 3PF package and 1500V drain to source voltage
Key Attributes
Model Number:
KNL42150A
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
2.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
6.5Ω@10V,1.3A
Gate Threshold Voltage (Vgs(th)):
5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
11pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.5nF
Pd - Power Dissipation:
63W
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
KNL42150A
Package:
TO-3PF-3
Product Description
Product Overview
The KNX42150A is a high-speed switching N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features a full isolated TO-3PF plastic package and is designed for switching applications. Key advantages include high-speed switching and a typical RDS(ON) of 6.5 at VGS=10V.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Package: TO-3PF
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| VDSS | Drain-to-Source Voltage | TJ=25 C | -- | -- | 1500 | V |
| VGSS | Gate-to-Source Voltage | -- | -- | ±30 | V | |
| ID | Continuous Drain Current @ Tc=25 C | -- | -- | 2.8 | A | |
| ID | Continuous Drain Current @ Tc=100 C | -- | -- | 1.6 | A | |
| IDM | Pulsed Drain Current at VGS=10V | Limited by TJmax | -- | -- | 10 | A |
| EAS | Single Pulse Avalanche Energy | VDD=50V | -- | 450 | -- | mJ |
| PD | Maximum Power Dissipation | -- | -- | -- | 63 | W |
| TJmax | Max. Junction Temperature | -- | -- | -- | 150 | ºC |
| TSTG | Storage Temperature Range | -- | -55 | -- | 150 | ºC |
| RθJC | Thermal Resistance, Junction-to-Case | -- | -- | 2 | -- | ºC /W |
| RθJA | Thermal Resistance, Junction-to-Ambient | -- | -- | 50 | -- | ºC /W |
| BVDSS | Drain-to-Source Breakdown Voltage | VGS=0V, ID=1mA | 1500 | -- | -- | V |
| RDS(ON) | Drain-to-Source ON Resistance | VGS=10V, ID=1.3A | -- | 6.5 | 9 | Ω |
| IDSS | Drain-to-Source Leakage Current | VDS=1500V, VGS=0V | -- | -- | 10 | uA |
| IGSS | Gate-to-Source Leakage Current | VGS=±20V, VDS=0V | -100 | -- | 100 | nA |
| Rgint | Integrated Gate Resistor | -- | -- | 2 | -- | Ω |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250uA | 3 | 4 | 5 | V |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 1500 | -- | pF |
| Crss | Reverse Transfer Capacitance | -- | -- | 11 | -- | pF |
| Coss | Output Capacitance | -- | -- | 88 | -- | pF |
| Qg | Total Gate Charge | VDD=1200V, ID=2.5A, VGS=10V | -- | 35 | -- | nC |
| Qgs | Gate-to-Source Charge | -- | -- | 6 | -- | nC |
| Qgd | Gate-to-Drain (Miller) Charge | -- | -- | 20 | -- | nC |
| td(ON) | Turn-on Delay Time | VDD=750V, ID=1.25A, RG=4.7Ω, VGS= 10V (Resistive Load), TJ=25ºC | -- | 30 | -- | nS |
| trise | Rise Time | -- | -- | 65 | -- | nS |
| td(OFF) | Turn-Off Delay Time | -- | -- | 45 | -- | nS |
| tfall | Fall Time | -- | -- | 60 | -- | nS |
| ISD | Continuous Source Current | -- | -- | -- | 2.8 | A |
| VSD | Forward Voltage | IS=2.5A, VGS=0V | -- | - | 1.6 | V |
| trr | Reverse recovery time | VGS=0V ,IF=2.5A, diF/dt=-100A/μs | -- | 410 | -- | nS |
| Qrr | Reverse recovery charge | -- | -- | 2280 | -- | nC |
2410010001_KIA-Semicon-Tech-KNL42150A_C382152.pdf
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