Low Capacitance Silicon Epitaxial Planar Diode KEC KDS114E-RTL PA for VHF Tuner Band Switch Circuits
Key Attributes
Model Number:
KDS114E-RTL/PA
Product Custom Attributes
Reverse Leakage Current (Ir):
100nA
Diode Configuration:
1 Independent
Voltage - DC Reverse (Vr) (Max):
35V
Pd - Power Dissipation:
100mW
Voltage - Forward(Vf@If):
850mV@2mA
Current - Rectified:
100mA
Mfr. Part #:
KDS114E-RTL/PA
Package:
ESC
Product Description
Product Overview
The KDS114E is a silicon epitaxial planar diode designed for VHF tuner band switch applications. It features a small package, low total capacitance (CT=1.2pF Max.), and low series resistance (rS=0.5 Typ.). The suffix U variant is qualified to AEC-Q101 standards.
Product Attributes
- Type: Silicon Epitaxial Planar Diode
- Application: VHF Tuner Band Switch
- AEC-Q101 Qualified: Available (Suffix U)
Technical Specifications
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Forward Voltage | VF | IF=2mA | - | - | 0.85 | V |
| Reverse Current | IR | VR=15V | - | - | 0.1 | A |
| Reverse Voltage | VR | IR=1A | 35 | - | - | V |
| Total Capacitance | CT | VR=6V, f=1MHz | - | 0.7 | 1.2 | pF |
| Series Resistance | rS | IF=2mA, f=100MHz | - | 0.5 | 0.9 |
Maximum Ratings
| Rating | Symbol | Value | Unit | Condition |
|---|---|---|---|---|
| Reverse Voltage | VR | 35 | V | - |
| Forward Current | IF | 100 | mA | - |
| Power Dissipation | PD | 100 | mW | - |
| Junction Temperature | Tj | 150 | - | |
| Storage Temperature Range | Tstg | -55150 | - |
Dimensions (Unit: mm)
| Dimension | A | B | C | D | E | F | G |
|---|---|---|---|---|---|---|---|
| Size | 1.60 0.10 | 1.20 0.10 | 0.80 0.10 | 0.30 0.05 | 0.60 0.10 | 0.13 0.05 | 0.20 0.10 |
2410121849_KEC-KDS114E-RTL-PA_C5274824.pdf
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