High reliability small surface mounting diode KEC KDS135-RTK PU ideal for compact electronic designs
Key Attributes
Model Number:
KDS135-RTK/PU
Product Custom Attributes
Reverse Leakage Current (Ir):
40nA
Non-Repetitive Peak Forward Surge Current:
2A
Reverse Recovery Time (trr):
30ns
Voltage - DC Reverse (Vr) (Max):
250V
Pd - Power Dissipation:
200mW
Voltage - Forward(Vf@If):
1V@100mA
Current - Rectified:
100mA
Mfr. Part #:
KDS135-RTK/PU
Package:
USC
Product Description
Product Overview
The KDS135 is a high-reliability silicon epitaxial planar diode designed for high-voltage switching applications. Its small surface mounting type (USC) makes it suitable for compact electronic designs. This diode offers robust performance with features such as high reliability and a small footprint.
Product Attributes
- Brand: SEMICONDUCTOR
- Product Type: SILICON EPITAXIAL PLANAR DIODE
- Model: KDS135
- Package Type: USC (Small surface mounting type)
Technical Specifications
| Characteristic | Symbol | Test Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings (Ta=25) | ||||||
| Maximum (Peak) Reverse Voltage | VRM | 300 | V | |||
| Reverse Voltage | VR | 250 | V | |||
| Maximum (Peak) Forward Current | IFM | 300 | mA | |||
| Average Forward Current | IO | 100 | mA | |||
| Surge Current (10mS) | IFSM | 2 | A | |||
| Power Dissipation | PD* | Mounted on a glass epoxy circuit board of 20x20mm, Pad dimension of 4x4mm | 200 | mW | ||
| Junction Temperature | Tj | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Electrical Characteristics (Ta=25) | ||||||
| Forward Voltage | VF | IF=100mA | 1.0 | 1.2 | V | |
| Reverse Current | IR(1) | VR=250V | 0.04 | 0.2 | A | |
| Reverse Current | IR(2) | VR=300V | 100 | A | ||
| Total Capacitance | CT | VR=0V, f=1MHz | 1.35 | 3 | pF | |
| Reverse Recovery Time | trr | IR=30mA, IF=30mA | 30 | 100 | nS | |
2409302203_KEC-KDS135-RTK-PU_C19270892.pdf
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