High current N channel MOSFET KIA Semicon Tech KNB3610A 60A 100V ideal for power switching circuits
Key Attributes
Model Number:
KNB3610A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
60A
RDS(on):
20mΩ@10V
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Reverse Transfer Capacitance (Crss@Vds):
208pF
Number:
1 N-channel
Output Capacitance(Coss):
235pF
Pd - Power Dissipation:
-
Input Capacitance(Ciss):
3.83nF
Gate Charge(Qg):
82nC@10V
Mfr. Part #:
KNB3610A
Package:
TO-263
Product Description
60A, 100V N-CHANNEL MOSFET - KNX3610A
The KNX3610A is an N-CHANNEL MOSFET utilizing advanced trench technology to deliver excellent RDS(ON) and low gate charge. This design makes it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Its high-density cell design contributes to lower RDS(ON), while the fully characterized avalanche voltage and current, along with good stability and uniformity, ensure reliable performance. The excellent package design provides efficient heat dissipation.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KNX3610A
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | |||||||
| Drain-source voltage | VDS | 100 | V | ||||
| Gate-source voltage | VGS | +20 | V | ||||
| Continuous drain current | ID | 60 | A | ||||
| Pulsed drain current (Note1) | IDM | 240 | A | ||||
| Single pulse avalanche energy (Note2) | EAS | 250 | mJ | ||||
| Power Dissipation (Derating Factor above 25C) | PD | 160 | W/C | ||||
| Operation junction and temperature range | TJ, TSTG | -55 to175 | C | ||||
| Thermal Characteristics | |||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.93 | C /W | ||||
| Electrical Characteristics (TA=25C, unless otherwise noted) | |||||||
| Off Characteristics | |||||||
| Drain-source breakdown voltage | BVDSS | 100 | V | VGS=0V,ID=250A | 100 | - | - |
| Drain-Source Leakage Current | IDSS | - | A | VDS=80V, VGS=0V | - | - | 1 |
| Gate-Soure Forward Leakage | IGSS(F) | - | nA | VGS=+20V | - | - | 100 |
| Gate-Soure Reverse Leakage | IGSS(R) | - | nA | VGS=-20V | - | - | -100 |
| On Characteristics | |||||||
| Drain-source on-Resistance (Note3) | RDS(on) | - | m | VGS=10V,ID=20A | - | 17 | 20 |
| Gate threshold voltage | VGS(th) | - | V | VDS=VGS, ID=250A | 2.0 | 3.0 | 4.0 |
| Forward Transconductance | gfs | - | S | VDS=5V,ID=20A | - | 20 | - |
| Dynamic Characteristics | |||||||
| Total gate charge | Qg | - | nC | VDD=80V, VGS=10V, ID =30A | - | 82 | - |
| Gate-source charge | Qgs | - | - | 24 | - | ||
| Gate-drain charge | Qgd | - | - | 28 | - | ||
| Turn-on delay time | td(on) | - | ns | VDD=50V, ID=30A, RGEN=3, VGS=10V | - | 13 | - |
| Rise time | tr | - | - | 10 | - | ||
| Turn-off delay time | td(off) | - | - | 21 | - | ||
| Fall time | tf | - | - | 18 | - | ||
| Switching Characteristics (Note 4) | |||||||
| Input capacitance | Ciss | - | pF | VDS=25V,VGS=0V, f=1MHz | - | 3830 | - |
| Output capacitance | Coss | - | - | 235 | - | ||
| Reverse transfer capacitance | Crss | - | - | 208 | - | ||
| Drain-Source Diode Characteristics | |||||||
| Diode Forward voltage | VSD | - | V | VGS=0V,IS=20A | - | - | 1.2 |
2409302232_KIA-Semicon-Tech-KNB3610A_C2896652.pdf
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