Powerful 20A 500V N Channel MOSFET KIA Semicon Tech KNH7150A with Low RDS ON and Fast Recovery Diode
Key Attributes
Model Number:
KNH7150A
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
20A
Operating Temperature -:
-55℃~+150℃@(Tj)
RDS(on):
240mΩ@10V,10A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
2.65nF@25V
Pd - Power Dissipation:
275W
Gate Charge(Qg):
-
Mfr. Part #:
KNH7150A
Package:
TO-3P
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX7150A is a 20A, 500V N-CHANNEL MOSFET featuring proprietary New Planar Technology. It offers a typical RDS(ON) of 0.24 at VGS=10V, low gate charge for minimized switching loss, and a fast recovery body diode. This MOSFET is suitable for applications such as adaptor chargers, SMPS power supplies, and LCD panel power.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Part Number | Package | Continuous Drain Current (A) | Continuous Drain Current @ Tc=100C (A) | Drain-to-Source Voltage (V) | RDS(ON) Typ. () | Gate Threshold Voltage (V) | Thermal Resistance, Junction-to-Case (C/W) |
| KNP7150A | TO-220 | 20 | Figure3 | 500 | 0.24 | 2.0 - 4.0 | 0.71 |
| KNF7150A | TO-220F | 20 | Figure3 | 500 | 0.24 | 2.0 - 4.0 | 2.08 |
| KNH7150A | TO-3P | 20 | Figure3 | 500 | 0.24 | 2.0 - 4.0 | 0.45 |
2410010002_KIA-Semicon-Tech-KNH7150A_C709691.pdf
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