150A 30V N CHANNEL MOSFET KIA Semicon Tech KNY2803A with low on resistance and fast switching speed
Key Attributes
Model Number:
KNY2803A
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
150A
RDS(on):
2.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
605pF
Number:
1 N-channel
Output Capacitance(Coss):
715pF
Input Capacitance(Ciss):
5.35nF
Pd - Power Dissipation:
50W
Gate Charge(Qg):
110nC@4.5V
Mfr. Part #:
KNY2803A
Package:
DFN-8(5x6)
Product Description
Product Overview
The KNX2803A is a 150A, 30V N-CHANNEL MOSFET from KIA SEMICONDUCTORS, designed using trench processing techniques for extremely low on-resistance. It features a 175C junction operating temperature, fast switching speed, and improved repetitive avalanche rating, making it an efficient and reliable device for motor applications and a wide variety of other uses.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Certifications: Lead-Free, RoHS Compliant
Technical Specifications
| Part Number | Package | Brand | Drain-source voltage (VDSS) | Gate-source voltage (VGSS) | Continuous drain current @VGS=10V,TC=25 C (ID) | Pulsed drain current (IDM) | Avalanche energy single pulse (EAS) | Maximum Power dissipation (PD) | Maximum junction temperature (TJ) | Storage temperature range (TSTG) | Diode continuous forward current (IS) | Thermal resistance, Junction-to-case (JC) TO-252/DFN5*6 | Thermal resistance, Junction-to-case (JC) TO-263/TO-220 | Drain-source breakdown voltage (BVDSS) | Gate-source leakage current (IGSS) | Gate threshold voltage (VGS(th)) | Static drain-source on-resistance (RDS(on)) @VGS=10V,ID=40A | Static drain-source on-resistance (RDS(on)) @VGS=4.5V,ID=40A | Input capacitance (Ciss) | Output capacitance (Coss) | Reverse transfer capacitance (Crss) | Total gate charge (Qg) | Gate-source charge (Qgs) | Gate-drain (Miller)charge (Qgd) | Turn-on delay time (Td(ON)) | Rise time (trise) | Turn-off delay time (Td(OFF)) | Fall time (tfall) | Diode forward voltage (VSD) | Reverse recovery time (trr) | Reverse recovery charge (Qrr) |
| KNP2803A | TO-220 | KIA | 30 V | 20 V | 150 A | 600 A | 625 mJ | 160 W | 175 C | -55~+175 C | 150 A | N/A | 0.93 C/W | 30 V | 100 nA | 0.8 - 2.0 V | - 3.0 m | - 4.0 m | - 5350 pF | - 715 pF | - 605 pF | - 110 nC | - 35 nC | - 14 nC | - 19 nS | - 50 nS | - 20 nS | - 26 nS | - 1.3 V | - 32 ns | - 33 nC |
| KNB2803A | TO-263 | KIA | 30 V | 20 V | 150 A | 600 A | 625 mJ | 160 W | 175 C | -55~+175 C | 150 A | 3.0 C/W | 0.93 C/W | 30 V | 100 nA | 0.8 - 2.0 V | - 2.2 3.0 m | - 2.8 4.0 m | - 5350 pF | - 715 pF | - 605 pF | - 110 nC | - 35 nC | - 14 nC | - 19 nS | - 50 nS | - 20 nS | - 26 nS | - 1.3 V | - 32 ns | - 33 nC |
| KND2803A | TO-252 | KIA | 30 V | 20 V | 150 A | 600 A | 625 mJ | 50 W | 175 C | -55~+175 C | 150 A | 3.0 C/W | N/A | 30 V | 100 nA | 0.8 - 2.0 V | - 2.2 3.0 m | - 2.8 4.0 m | - 5350 pF | - 715 pF | - 605 pF | - 110 nC | - 35 nC | - 14 nC | - 19 nS | - 50 nS | - 20 nS | - 26 nS | - 1.3 V | - 32 ns | - 33 nC |
| KNY2803A | DFN5*6 | KIA | 30 V | 20 V | 150 A | 600 A | 625 mJ | 50 W | 175 C | -55~+175 C | 150 A | 3.0 C/W | N/A | 30 V | 100 nA | 0.8 - 2.0 V | - 2.2 3.0 m | - 2.8 4.0 m | - 5350 pF | - 715 pF | - 605 pF | - 110 nC | - 35 nC | - 14 nC | - 19 nS | - 50 nS | - 20 nS | - 26 nS | - 1.3 V | - 32 ns | - 33 nC |
2409302301_KIA-Semicon-Tech-KNY2803A_C709678.pdf
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