Low On Resistance P Channel MOSFET KEXIN KI2333CDS in Compact SOT23 3 Package for Electronic Devices
Key Attributes
Model Number:
KI2333CDS
Product Custom Attributes
Drain To Source Voltage:
12V
Current - Continuous Drain(Id):
5.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V,5.1A
Gate Threshold Voltage (Vgs(th)):
400mV
Reverse Transfer Capacitance (Crss@Vds):
260pF@6V
Number:
1 P-Channel
Input Capacitance(Ciss):
1.225nF@6V
Pd - Power Dissipation:
1.6W
Gate Charge(Qg):
25nC@4.5V
Mfr. Part #:
KI2333CDS
Package:
SOT-23
Product Description
Product Overview
The SI2333CDS (KI2333CDS) is a P-Channel Enhancement Mode MOSFET designed for various applications. It features a low on-resistance and is available in a compact SOT-23-3 SMD package.
Product Attributes
- Brand: Kexin
- SMD Type: SOT-23-3
- Origin: www.kexin.com.cn
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDS | -12 | V | |||
| Gate-Source Voltage | VGS | ±8 | V | |||
| Continuous Drain Current | ID | Ta = 25, VGS = -4.5V | -5.1 | A | ||
| Continuous Drain Current | ID | Ta = 70, VGS = -4.5V | -4.0 | A | ||
| Pulsed Drain Current | IDM | Ta = 25, 5 sec | -7.1 | A | ||
| Pulsed Drain Current | IDM | Ta = 70, 5 sec | -5.7 | A | ||
| Power Dissipation | PD | Ta = 25, Steady State | 1.25 | W | ||
| Power Dissipation | PD | Ta = 70, Steady State | 0.8 | W | ||
| Thermal Resistance.Junction-to-Ambient | RthJA | *1 | 100 | /W | ||
| Thermal Resistance.Junction-to-Foot | RthJF | *1 | 50 | /W | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature Range | Tstg | -55 | 150 | |||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -12 | V | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=8V | ±100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -0.4 | -1 | V | |
| Static Drain-Source On-Resistance | RDS(On) | VGS =-4.5V, ID =-5.1A | 28.5 | 35 | m | |
| Static Drain-Source On-Resistance | RDS(On) | VGS =-2.5V, ID =-4.5A | 36 | 45 | m | |
| Static Drain-Source On-Resistance | RDS(On) | VGS =-1.8V, ID =-2.0A | 46 | 59 | m | |
| On state drain current | ID(ON) | VGS =-4.5V, VDS =-5V | -20 | A | ||
| Forward Transconductance | gFS | VDS=-5V, ID=-1.9A | 1.6 | S | ||
| Zero Gate Voltage Drain Current | IDSS | VDS=-12V, VGS=0V, TJ=150 | -1 | A | ||
| Input Capacitance | Ciss | VGS=-4.5V, VDS=-6V, ID=-5.1A | 1225 | pF | ||
| Output Capacitance | Coss | 315 | pF | |||
| Reverse Transfer Capacitance | Crss | 260 | pF | |||
| Gate Source Charge | Qgs | VGS=-4.5V, VDS=-6V, ID=-5.1A | 15 | 25 | nC | |
| Gate Drain Charge | Qgd | 9 | 15 | nC | ||
| Total Gate Charge | Qg | VGS=-4.5V, VDS=-6V, RL=6,RGEN=1 | 1.9 | nC | ||
| Turn-On DelayTime | td(on) | ID=-1.0A | 13 | 20 | ns | |
| Turn-On Rise Time | tr | 35 | 60 | ns | ||
| Turn-Off DelayTime | td(off) | 45 | 70 | ns | ||
| Turn-Off Fall Time | tf | 12 | 20 | ns | ||
| Body Diode Reverse Recovery Charge | Qrr | IF = 1.0 A, di/dt = 100 A/ us,TJ=25 | 20 | 40 | nC | |
| Body Diode Reverse Recovery Time | trr | 32 | 50 | ns | ||
| Reverse Recovery Fall Time | ta | 16 | ns | |||
| Reverse Recovery Rise Time | tb | 16 | ns | |||
| Maximum Body-Diode Continuous Current | IS | TC=25 | -1.0 | A | ||
| Diode Forward Voltage | VSD | IS=-1.0A,VGS=0V | -0.7 | -1.2 | V | |
2410121916_KEXIN-KI2333CDS_C489372.pdf
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