High Reliability KY BTA12-800BW TRIAC with 12 Amp RMS Current and 800 Volt Peak Off State Voltage
Key Attributes
Model Number:
BTA12-800BW
Product Custom Attributes
Holding Current (Ih):
50mA
Voltage - On State(Vtm):
1.55V
Average Gate Power Dissipation (PG(AV)):
1W
Current - On State(It(RMS)):
12A
Peak Off - State Voltage(Vdrm):
800V
Current - Surge(Itsm@f):
126A
SCR Type:
1 TRIAC
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
1.3V
Mfr. Part #:
BTA12-800BW
Package:
TO-220A
Product Description
ShenZhenHanKingyuan Electronic CO.,Ltd BTA/BTB12 Series TRIACs
The BTA/BTB12 Series TRIACs from ShenZhenHanKingyuan Electronic CO.,Ltd are high-performance components designed for 3-quadrant and 4-quadrant applications. With an RMS on-state current of 12A and repetitive peak off-state voltages of 800V and 1000V, these TRIACs are suitable for a wide range of applications including washing machines, vacuums, massagers, solid-state relays, and AC motor speed regulation. Available in various package types including TO-220A (Insulated), TO-220B (Non-Insulated), TO-220C (Insulated), and TO-263, they offer versatility for different design requirements.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Product Series: BTA/BTB12 Series
- Origin: Shenzhen
- Trademark: KY logo (registered)
Technical Specifications
| Parameter | Conditions | BTA12/BTB12-800 | BTA12/BTB12-1000 | Unit |
|---|---|---|---|---|
| Repetitive Peak Off-State Voltage (VDRM/VRRM) | 800 | 1000 | V | |
| R.M.S On-State Current (IT(RMS)) | Tc=110C | 12 | A | |
| Surge On-State Current (ITSM) | 120/126 | A | ||
| It for fusing | Tp=10ms | 78 | As | |
| Average Gate Power Dissipation (PG(AV)) | Tj=125C | 1 | W | |
| Peak Gate Current (IGM) | tp=20us, Tj=125C | 4 | A | |
| Operating Junction Temperature (Tj) | -40~125 | C | ||
| Storage Temperature (TSTG) | -40~150 | C | ||
| Repetitive Peak Off-State Current (IDRM) | Tj=25C | 5 | uA | |
| Repetitive Peak Off-State Current (IDRM) | Tj=125C | 1 | mA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=25C | 5 | uA | |
| Repetitive Peak Reverse Current (IRRM) | Tj=125C | 1 | mA | |
| Forward "on" voltage (VTM) | IT=17A, tp=380us | 1.55 | V | |
| Gate trigger voltage (VGT) | VD=12V, RL=30 | 1.3 | V | |
| Critical rate of rise of on-state current (di/dt) | I,II,III, F=100Hz, IG=2xIGT, tr 100ns | 50 | A/us | |
| Critical rate of rise of on-state current (di/dt) | IV, F=100Hz, IG=2xIGT, tr 100ns | 10 | A/us | |
| Gate trigger current (IGT) | I,II,III, VD=12V, RL=30 | 5 / 10 / 25 / 50 | 25 / 50 | mA |
| Gate trigger current (IGT) | IV, VD=12V, RL=30 | 50 / 100 | mA | |
| Holding current (IH) | IT=0.2A | 20 / 25 / 35 / 50 | 25 / 50 | mA |
| Gate non-trigger voltage (VGD) | ALL, VD=VDRM, TJ=125C, RL=3.3K | 0.2 | V | |
| Critical-rate of rise of commutation voltage (dv/dt) | TJ=125C, VD=2/3VDRM, Gate | 40 / 100 / 400 / 1000 | 200 / 400 | V/us |
| Thermal resistance Junction to case (Rth(j-c)) | 3.3 | C/W | ||
| Thermal resistance Junction to ambient (Rth(j-a)) | 60 | C/W | ||
2511102004_KY-BTA12-800BW_C5366678.pdf
Related Products
N Channel Enhancement Mode MOSFET YANGJIE YJG70G06A with Low RDS ON and Excellent Thermal Performance
Product OverviewThe YJG70G06A is an N-Channel Enhancement Mode Field Effect Transistor from Yangzhou Yangjie Electronic Technology Co., Ltd. Featuring Split Gate Trench MOSFET technology and a high-density cell design, it offers excellent package heat dissipation and low RDS(ON). It is suitable for ...
Glass passivated chip diode YONGYUTAI MB8S offering performance in power supply and rectification circuits
Product OverviewThis series of glass passivated chip junction diodes offers a wide range of reverse voltage capabilities from 100V to 1000V, with a forward current of 0.8A and high surge current capability. Designed for surface mount applications, these diodes are suitable for various power supply ...
Planar Die Zener Diode XZT BZT52C5V6S for Medium Current Applications Lead Free Version
XT ELECTRONICS BZT52C2V4S thru BZT52C43S ZENER DIODEThe XT ELECTRONICS BZT52C2V4S thru BZT52C43S series are planar die construction Zener diodes designed for general purpose and medium current applications. They are ideally suited for automated assembly processes and are available in lead-free ...
400 watt LDMOS FET power amplifier Wolfspeed PXAE213708NB-V1-R2 for 2110 to 2180 MHz cellular applications
Product Overview The Wolfspeed PXAE213708NB is a 400-watt LDMOS FET designed for multi-standard cellular power amplifier applications within the 2110 to 2180 MHz frequency band. This device features broadband internal input and output matching, an asymmetrical Doherty design with distinct main and ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
