P Channel MOSFET KIA Semicon Tech KPD8106A 30A 60V Low RDS ON Suitable for PWM Applications
Key Attributes
Model Number:
KPD8106A
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
30A
RDS(on):
31mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 P-Channel
Output Capacitance(Coss):
180pF
Pd - Power Dissipation:
57W
Input Capacitance(Ciss):
3.06nF
Gate Charge(Qg):
40nC
Mfr. Part #:
KPD8106A
Package:
TO-252
Product Description
Product Overview
This -30A, -60V P-CHANNEL MOSFET (Model KPD8106A) from KIA SEMICONDUCTORS offers very low on-resistance (RDS(ON) typ. 26m @ VGS=-10V), low Crss, and fast switching capabilities. It is 100% avalanche tested and features improved dv/dt capability, making it suitable for PWM applications, load switches, and power management systems.
Product Attributes
- Brand: KIA
- Part Number: KPD8106A
- Package: TO-252
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | -60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=-60V, VGS=0V | - | - | -1 | uA |
| Gate-Body Leakage Current | IGSS | VGS=20V, VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(TH) | VDS=VGS, ID=-250A | -1.0 | -1.7 | -2.5 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=-10V, ID=-20A | - | 26 | 31 | m |
| VGS=-4.5V, ID=-20A | - | 29 | 35 | m | ||
| Gate Resistance | RG | f=1MHz | - | 6 | - | |
| Input Capacitance | Ciss | VDS=-20V, VGS=0V, f=1MHz | - | 3060 | - | pF |
| Output Capacitance | Coss | - | - | 180 | - | pF |
| Reverse Transfer Capacitance | Crss | - | - | 150 | - | pF |
| Total Gate Charge | Qg | VDS=-20V, ID=-10A, VGS=-10V | - | 40 | - | nC |
| Gate Source Charge | Qgs | - | - | 8 | - | nC |
| Gate Drain Charge | Qgd | - | - | 5 | - | nC |
| Turn-on Delay Time | td(on) | VGS=-15V, ID=-1A, RG=3.3, VGS=-10V, TJ=25C | - | 40 | - | nS |
| Turn-on Rise Time | tr | - | - | 25 | - | nS |
| Turn-Off Delay Time | td(off) | - | - | 75 | - | nS |
| Turn-Off Fall Time | tf | - | - | 6 | - | nS |
| Maximum Continuous Drain-Source Diode Forward Current | IS | - | - | - | -30 | A |
| Maximum Pulsed Drain-Source Diode Forward Current | ISM | - | - | - | -120 | A |
| Drain to Source Diode Forward Voltage | VSD | IS=-10A, VGS=0V, TJ=25C | - | - | -1.2 | V |
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDSS | -60 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Drain Current* | ID | TC=25C: -30 | A |
| TC=100C: -20 | |||
| Pulse Drain Current Tested | IDM | -120 | A |
| Single Pulse Avalanche Energy | EAS | 196 | mJ |
| Maximum Power Dissipation @ TC=25C | PD | 57 | W |
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | C |
| Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds | TL | 300 | C |
| Parameter | Symbol | Rating | Unit |
| Thermal Resistance, Junction-to-Case | RJC | 2.2 | C/W |
2411121110_KIA-Semicon-Tech-KPD8106A_C41369550.pdf
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