Low On Resistance P Channel MOSFET KEXIN KI9435DY Suitable for Various Power Management Applications
Key Attributes
Model Number:
KI9435DY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+150℃
RDS(on):
58mΩ@10V,5.3A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
77pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
690pF@15V
Pd - Power Dissipation:
1.2W
Gate Charge(Qg):
14nC@15V
Mfr. Part #:
KI9435DY
Package:
SOP-8
Product Description
Product Overview
The KI9435DY is a P-Channel MOSFET designed for efficient switching applications. It features a low on-resistance, fast switching speed, and robust absolute maximum ratings, making it suitable for various power management scenarios.
Product Attributes
- Brand: Kexin
- SMD Type: SOP-8
- Origin: China (implied by www.kexin.com.cn)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Drain-Source Breakdown Voltage | VDSS | ID=-250A, VGS=0V | -30 | V | ||
| ID=-250A, VGS=0V | -30 | V | ||||
| ID=-250A, VGS=0V | -30 | V | ||||
| ID=-250A, VGS=0V | -30 | V | ||||
| Zero Gate Voltage Drain Current | IDSS | VDS=-24V, VGS=0V | -1 | A | ||
| VDS=-24V, VGS=0V | -1 | A | ||||
| Gate-Body leakage current | IGSS | VDS=0V, VGS=20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=-250A | -1 | -3 | V | |
| VDS=VGS, ID=-250A | -1 | -3 | V | |||
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-5.3A (Note.1) | 58 | m | ||
| VGS=-10V, ID=-5.3A ,TJ=125 (Note.1) | 84 | m | ||||
| VGS=-4.5V, ID=-4.2A (Note.1) | 89 | m | ||||
| VGS=-10V, ID=-1A,RG=6 (Note.1) | 58 | m | ||||
| Continuous Drain Current | ID | VGS=-10V, VDS=-5V (Note.1) | -5.3 | A | ||
| VGS=-10V, VDS=-5V (Note.1) | -5.3 | A | ||||
| Forward Transconductance | gFS | VDS=-15V, ID=-5.3A (Note.1) | 12 | S | ||
| Input Capacitance | Ciss | VGS=0V, VDS=-15V, f=1MHz | 690 | pF | ||
| Output Capacitance | Coss | VGS=0V, VDS=-15V, f=1MHz | 306 | pF | ||
| Reverse Transfer Capacitance | Crss | VGS=0V, VDS=-15V, f=1MHz | 77 | pF | ||
| Total Gate Charge | Qg | VGS=-15V, VDS=-10V, ID=-5.3A | 14 | 23 | nC | |
| Gate Source Charge | Qgs | VGS=-15V, VDS=-10V, ID=-5.3A | 2.4 | nC | ||
| Gate Drain Charge | Qg | VGS=-15V, VDS=-10V, ID=-5.3A | 4.8 | nC | ||
| Turn-On Delay Time | td(on) | VGS=-10V, VDS=-15V, ID=-5.3A, RG=6 | 7 | 14 | ns | |
| Turn-On Rise Time | tr | VGS=-10V, VDS=-15V, ID=-5.3A, RG=6 | 10 | 18 | ns | |
| Turn-Off Delay Time | td(off) | VGS=-10V, VDS=-15V, ID=-5.3A, RG=6 | 19 | 34 | ns | |
| Turn-Off Fall Time | tf | VGS=-10V, VDS=-15V, ID=-5.3A, RG=6 | 11 | 20 | ns | |
| Maximum Body-Diode Continuous Current | IS | -5.3 | A | |||
| Diode Forward Voltage | VSD | IS=-5.3A,VGS=0V (Note.1) | -1.2 | V |
| Parameter | Symbol | Rating | Unit |
| Drain-Source Voltage | VDS | -30 | V |
| Gate-Source Voltage | VGS | 20 | V |
| Continuous Drain Current | ID | -5.3 | A |
| Avalanche Current | IAS | -20 | A |
| Avalanche Energy (L=0.1mH) | EAS | 17 | mJ |
| Pulsed Drain Current | IDM | -20 | A |
| Junction Temperature | TJ | 150 | |
| Storage Temperature Range | Tstg | -55 to 150 | |
| Thermal Resistance.Junction- to-Ambient | RthJA | 50 (Note.1) | /W |
| Thermal Resistance.Junction- to-Case | RthJC | 25 | /W |
2410121944_KEXIN-KI9435DY_C489343.pdf
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