Industrial grade KY C106M sensitive gate SCR for AC power control applications and electronic systems
Key Attributes
Model Number:
C106M
Product Custom Attributes
Holding Current (Ih):
5mA
Voltage - On State(Vtm):
1.7V
Average Gate Power Dissipation (PG(AV)):
200mW
Current - On State(It(RMS)):
4A
Peak Off - State Voltage(Vdrm):
600V
Current - Surge(Itsm@f):
30A
SCR Type:
1 SCR
Operating Temperature:
-40℃~+125℃
Gate Trigger Voltage (Vgt):
800mV
Mfr. Part #:
C106M
Package:
TO-126
Product Description
ShenZhenHanKingyuan Electronic CO.,Ltd C106 Series 4A SCRs Sensitive Gate SCRs
The C106 Series Sensitive Gate SCRs from ShenZhenHanKingyuan Electronic CO.,Ltd are designed for AC power control applications. These devices offer sensitive gate triggering, making them suitable for various electronic control systems. Key applications include washing machines, vacuum cleaners, massagers, solid-state relays, and AC motor speed regulation.
Product Attributes
- Brand: ShenZhenHanKingyuan Electronic CO.,Ltd
- Product Series: C106 Series
- Type: Sensitive Gate SCR
- Origin: Shenzhen
- Certifications: KY logo is a registered trademark
Technical Specifications
| Symbol | Parameter | Conditions | Ratings | Unit |
| VDRM, VRRM | Repetitive Peak Off-State Voltage | 600 | V | |
| IT(RMS) | R.M.S On-State Current | 4 | A | |
| IT(AV) | Average On-State Current | 2.5 | A | |
| ITSM | Surge On-State Current | F=50Hz, tp=10ms | 30 | A |
| It | It for fusing | Tp=10ms | 4.5 | As |
| IGM | Peak Gate Current | tp=20us, Tj=110C | 0.2 | A |
| PG(AV) | Average Gate Power Dissipation | Tj=110C | 0.2 | W |
| PGM | Peak Gate Power Dissipation | tp=20us, Tj=110C | 1 | W |
| Tj | Operating Junction Temperature | -40~125 | C | |
| TSTG | Storage Temperature | -40~150 | C | |
| IDRM | Repetitive Peak Off-State Current | Tc=25C | 5 | uA |
| IDRM | Repetitive Peak Off-State Current | Tc=110C | 100 | uA |
| IRRM | Repetitive Peak Reverse Current | Tj=25C | 5 | uA |
| IRRM | Repetitive Peak Reverse Current | Tj=110C | 100 | uA |
| VTM | Forward "on" voltage | IT=8A, tp=380us | 1.7 | V |
| VGD | Gate nontrigger voltage | VD=VDRM, Tj=125C | 0.2 | V |
| IL | Latching current | IG=1.2IGT | 6 | mA |
| IH | Holding current | VD=12V, IGT=0.1A | 5 | mA |
| VGT | Gate trigger voltage | VD=12V | 0.8 | V |
| IGT | Gate trigger current | VD=12V, IT=0.1A | 120 | uA |
| dv/dt | Critical-rate of rise of commutation voltage | VD=2/3VDRM, Tj=110C, RGK=1K | 10 | V/us |
2410121313_KY-C106M_C2831676.pdf
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