Medium power PNP transistor LangJie MMBT5401 featuring SOT23 package for amplification and switching
Key Attributes
Model Number:
MMBT5401
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
150V
Mfr. Part #:
MMBT5401
Package:
SOT-23
Product Description
Product Overview
The MMBT5401 is a PNP transistor in a SOT-23 package, designed for medium power amplification and switching applications. It serves as a complementary part to the MMBT5551.
Product Attributes
- Type: PNP Transistor
- Complementary to: MMBT5551
- Marking: 2L
- Package: SOT-23
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Collector-Base Voltage | VCBO | -160 | V | |||
| Collector-Emitter Voltage | VCEO | -150 | V | |||
| Emitter-Base Voltage | VEBO | -5 | V | |||
| Collector Current | IC | 0.6 | A | |||
| Collector Power Dissipation | PD | 0.3 | W | |||
| Thermal Resistance Junction to Ambient | RJA | 416 | /W | |||
| Junction Temperature (MAX.) | Tj | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Electrical Characteristics | ||||||
| Collector-base breakdown voltage | V(BR)CBO | IC=-100A, IE=0 | -160 | V | ||
| Collector-emitter breakdown voltage | V(BR)CEO | IC=-1mA, IB=0 | -150 | V | ||
| Emitter-base breakdown voltage | V(BR)EBO | IE=-10A, IC=0 | -5 | V | ||
| Collector cut-off current | ICBO | VCB=-120V, IE=0 | -0.1 | A | ||
| Emitter cut-off current | IEBO | VEB=-4V, IC=0 | -0.1 | A | ||
| DC current gain | hFE(1) | VCE=-5V, IC=-1mA | 80 | |||
| hFE(2) | VCE=-5V, IC=-10mA | 100 | 300 | |||
| hFE(3) | VCE=-5V, IC=-50mA | 50 | ||||
| Collector-emitter saturation voltage | VCE(sat)1 | IC=-10mA, IB=-1mA | -0.2 | V | ||
| VCE(sat)2 | IC=-50mA, IB=-5mA | -0.5 | V | |||
| Base-emitter saturation voltage | VBE(sat)1 | IC=-10mA, IB=-1mA | -1 | V | ||
| VBE(sat)2 | IC=-50mA, IB=-5mA | -1 | V | |||
| Transition frequency | FT | VCE=-5V,IC=-10mA, f=30MHz | 100 | MHz | ||
| CLASSIFICATION OF hFE (2) | ||||||
| RANK | L | H | RANGE | 100-200 | 200-300 | |
2410121257_LangJie-MMBT5401_C18195369.pdf
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