Silicon Carbide Schottky Diode KNSCHA KN3D10065G with Enhanced System Efficiency and Surge Capability
Key Attributes
Model Number:
KN3D10065G
Product Custom Attributes
Reverse Leakage Current (Ir):
10uA
Diode Configuration:
Independent
Voltage - DC Reverse (Vr) (Max):
650V
Voltage - Forward(Vf@If):
1.5V
Current - Rectified:
10A
Mfr. Part #:
KN3D10065G
Package:
DFN-5(8x8)
Product Description
Product Overview
The KN3D10065G is a Silicon Carbide Schottky Diode designed for high-frequency operation and high-temperature applications. It offers zero forward/reverse recovery current, high blocking voltage, and a positive temperature coefficient on VF, leading to higher system efficiency and reliability. Its temperature-independent switching behavior and high surge current capability make it suitable for demanding power applications.
Product Attributes
- Brand: KNSCHA
- Material: Silicon Carbide
- Package Type: DFN 8x8
Technical Specifications
| Parameter | Symbol | Test Conditions | Value | Unit |
| Peak Repetitive Reverse Voltage | VRRM | 650 | V | |
| 650 | V | |||
| 650 | V | |||
| Continuous Forward Current | IF | TC=25C | 28 | A |
| TC=135C | 11 | |||
| TC=140C | 10 | |||
| Non repetitive Forward Surge Current | IFSM | TC = 25C, tp=10 ms, Half Sine Pulse | 50 | A |
| TC = 110C, tp=10 ms, Half Sine Pulse | 40 | |||
| TC = 25C, tp=10 s, Square | 300 | |||
| Repetitive peak Forward Surge Current | IFRM | TC = 25C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 40 | A |
| TC = 110C, tp=10 ms, Freq = 0.1Hz, 100 cycles, Half Sine Pulse | 30 | |||
| Total power dissipation | PD | TC=25C | 83 | W |
| Operating Junction Temperature | TJ | -55 to 175 | C | |
| Storage Temperature | TSTG | -55 to 175 | C | |
| DC Blocking Voltage | VDC | IR = 250A,TJ = 25C | 650 | V |
| Forward Voltage | VF | IF = 10A, TJ = 25C | 1.5 - 1.8 | V |
| IF = 10A, TJ = 125C | 1.65 | |||
| IF = 10A, TJ = 175C | 1.8 | |||
| Reverse Current | IR | VR = 650V, TJ = 25C | 10 - 80 | uA |
| VR = 650V, TJ = 125C | 68 | |||
| VR = 650V, TJ = 175C | 190 | |||
| Total Capacitive Charge | QC | VR = 400V | 23 | nC |
| Total Capacitance | C | VR = 1V, TJ = 25C, Freq = 1MHz | 387 | pF |
| VR = 200V, TJ = 25C, Freq = 1MHz | 48 | |||
| VR = 400V, TJ = 25C, Freq = 1MHz | 33 | |||
| Thermal Resistance | Rth(j-c) | junction-case | 1.8 | 0C/W |
2410121327_KNSCHA-KN3D10065G_C5373124.pdf
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