P Channel MOSFET KEXIN KI4435DY with Drain Source Voltage Minus 30V and Low On State Resistance

Key Attributes
Model Number: KI4435DY
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
8.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
35mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.7V
Type:
P-Channel
Number:
1 P-Channel
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
KI4435DY
Package:
SOIC-8
Product Description

SI4435DY (KI4435DY) P-Channel MOSFET

The SI4435DY (KI4435DY) is a P-Channel MOSFET designed for various applications. It features a drain-source voltage of -30V and low on-state resistance, making it suitable for power management and switching tasks.

Product Attributes

  • Brand: Kexin
  • SMD Type: SOP-8
  • Origin: www.kexin.com.cn

Technical Specifications

ParameterSymbolTest ConditionsMinTypMaxUnit
DrainSource Breakdown VoltageBVDSSVGS = 0 V, ID = 250 A-30V
VDS = -30V , VGS = 0V-1V
Gate Threshold VoltageVGS(th)VDS = VGS , ID = -250uA-1.0-1.7-3V
Gate-Body LeakageIGSSVDS = 0V , VGS = 20V100nA
On-State Drain CurrentID(on)VGS = -10V , ID =-8.0A0.0150.02
VGS = -4.5V , ID = -5.0A0.0220.035
Zero Gate Voltage Drain CurrentIDSSVDS = -30V , VGS = 0V , TJ =70-5A
Drain-Source On-State ResistancerDS(on)VDS = -15V , VGS = -10V , ID = -4.6A
Continuous Drain CurrentIDTa = 25-8.8A
Pulsed Drain CurrentIDMTa = 25-50A
Maximum Power DissipationPDTa = 252.5W
Maximum Junction-to-AmbientRthJA50/W
Operating Junction and Storage Temperature RangeTJ, Tstg-55150
Total Gate ChargeQgVDD = -15V , RL = 15 , ID = -1A , VGEN = -10V , RG = 64760nC
Gate-Source ChargeQgsVDS = -15V , VGS = -10V , ID = -4.6A7.1nC
Gate-Drain ChargeQgdVDS = -15V , VGS = -10V , ID = -4.6A8nC
Turn-On Delay Timetd(on)VDS = -15V , VGS = -10V , ID = -4.6A1624ns
Rise TimetrVDS = -15V , VGS = -10V , ID = -4.6A76110ns
Turn-Off Delay Timetd(off)VDS = -15V , VGS = -10V , ID = -4.6A130200ns
Fall TimetfVDS = -15V , VGS = -10V , ID = -4.6A90140ns
Source-Drain Reverse Recovery TimetrrIF = -2.5A , di/dt = 100A/us3451ns
Continuous Source Current (Diode Conduction)IS-2.5A
Diode Forward VoltageVSDIS = 2.5 A, VGS = 0 V-1.2V

2410121715_KEXIN-KI4435DY_C489342.pdf

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