Low on resistance and fast switching KEXIN 2SK3018 Silicon N channel MOSFET for various electronic uses
Key Attributes
Model Number:
2SK3018
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
100mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
13Ω@2.5V,1mA
Gate Threshold Voltage (Vgs(th)):
1.5V@100uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Number:
1 N-channel
Input Capacitance(Ciss):
13pF@5V
Pd - Power Dissipation:
200mW
Mfr. Part #:
2SK3018
Package:
SOT-23
Product Description
Product Overview
The 2SK3018 is a Silicon N-channel MOSFET designed for applications requiring low on-resistance and fast switching speeds. Its simple drive circuit requirements make it suitable for various electronic designs.
Product Attributes
- Brand: Kexin (implied by website)
- Origin: China (implied by website)
- Material: Silicon
- Certifications: None specified
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
| Absolute Maximum Ratings | VDSS | 30 | V | |||
| VGSS | ±20 | V | ||||
| ID | 100 | mA | ||||
| IDP*1 | Pw≤10µs, duty cycle≤1% | 400 | mA | |||
| PD*2 | With each pin mounted on the recommended lands. | 200 | mW | |||
| Rth(ch-a)*2 | With each pin mounted on the recommended lands. | 625 | °C/W | |||
| Tch | 150 | °C | ||||
| Storage Temperature | Tstg | -55 | +150 | °C | ||
| Electrical Characteristics | IGSS | VGS = ±20 V, VDS = 0 V | 1 | µA | ||
| V(BR)DSS | ID= 10 µA, VGS = 0V | 30 | V | |||
| IDSS | VDS = 30 V, VGS = 0V | 1 | µA | |||
| VGS(th) | VDS = 3 V, ID= 100 µA | 0.8 | 1.5 | V | ||
| RDS(on) | ID= 10 mA, VGS = 4V | 5 | 7 | Ω | ||
| ID=1mA, VGS = 2.5V | 8 | 13 | Ω | |||
| Yfs | VDS = 3 V, ID= 10 mA | 20 | mS | |||
| Ciss | VDS = 5 V, f= 1MHz | 13 | pF | |||
| Coss | VDS = 0 V, f= 1MHz | 9 | pF | |||
| Crss | 4 | pF | ||||
| td(on) | ID= 10 mA, VDD= 5 V, RG= 10Ω | 15 | ns | |||
| tr | VGS= 5 V, RL=500Ω | 35 | ns | |||
| td(off) | 80 | ns | ||||
| tf | 80 | ns |
2410010130_KEXIN-2SK3018_C369942.pdf
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