NPN Plastic Encapsulated Transistor KTP MMBTA42 with High Breakdown Voltage and Low Saturation Voltage

Key Attributes
Model Number: MMBTA42
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
250nA
Pd - Power Dissipation:
350mW
Transition Frequency(fT):
50MHz
Type:
NPN
Number:
-
Current - Collector(Ic):
300mA
Collector - Emitter Voltage VCEO:
300V
Operating Temperature:
-55℃~+150℃@(Tj)
Mfr. Part #:
MMBTA42
Package:
SOT-23
Product Description

Product Overview

The MMBTA42 is an NPN plastic-encapsulated transistor from KTP Semiconductor. It features a high breakdown voltage and low collector-emitter saturation voltage, making it a complementary part to the MMBTA92 (PNP). This transistor is suitable for various electronic applications requiring reliable performance.

Product Attributes

  • Brand: KTP Semiconductor
  • Package: SOT-23
  • Material: Plastic-Encapsulated

Technical Specifications

ParameterSymbolTest ConditionsMinMaxUnit
Collector-Base Breakdown VoltageV(BR)CBOIC= 100A, IE=0300V
Collector-Emitter Breakdown VoltageV(BR)CEOIC= 1mA, IB=0300V
Emitter-Base Breakdown VoltageV(BR)EBOIE= 100A, IC=05V
Collector Cut-off CurrentICBOVCB=200V, IE=00.25A
Emitter Cut-off CurrentIEBOVEB= 5V, IC=00.1A
DC Current GainhFE(1)VCE= 10V, IC= 1mA60
hFE(2)VCE= 10V, IC=10mA100200
hFE(3)VCE=10V, IC=30mA60
Collector-Emitter Saturation VoltageVCE(sat)IC=20mA, IB= 2mA0.2V
Base-Emitter Saturation VoltageVBE(sat)IC= 20mA, IB=2mA0.9V
Transition FrequencyfTVCE= 20V, IC= 10mA, f=30MHz50MHz
ParameterSymbolValueUnit
Collector-Base VoltageVCBO300V
Collector-Emitter VoltageVCEO300V
Emitter-Base VoltageVEBO5V
Collector Current - ContinuousIC0.3A
Collector Power DissipationPC0.35W
Thermal Resistance, Junction to AmbientRJA357/W
Junction TemperatureTJ150
Storage TemperatureTstg-55~+150
Collector Current - PeakICM0.5A

2501151750_KTP-MMBTA42_C42445393.pdf

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