3 Amp Drain Current MOSFET KIA Semicon Tech KND42120A 1200V N Channel for in Power Supplies and SMPS
Key Attributes
Model Number:
KND42120A
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
3A
RDS(on):
9Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
22pF
Number:
1 N-channel
Output Capacitance(Coss):
60pF
Input Capacitance(Ciss):
860pF
Pd - Power Dissipation:
75W
Gate Charge(Qg):
17.5nC@10V
Mfr. Part #:
KND42120A
Package:
TO-252
Product Description
Product Overview
The KIA SEMICONDUCTORS KNX42120A is a 3.0A, 1200V N-CHANNEL MOSFET designed for various power applications. It features low gate charge for minimized switching loss and a fast recovery body diode. Key advantages include RoHS compliance and a typical RDS(ON) of 7.0 at VGS=10V. This MOSFET is suitable for use in adaptors, chargers, and SMPS standby power supplies.
Product Attributes
- Brand: KIA
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Package | Continuous Drain Current (ID @ Tc=25 C) | Drain-to-Source Voltage (VDSS) | RDS(ON), typ. (VGS=10V) | Gate Threshold Voltage (VGS(TH)) | Total Gate Charge (Qg) |
| KND42120A | TO-252 | 3.0 A | 1200 V | 7.0 | 2.5 - 4.5 V | 17.5 nC |
| KNP42120A | TO-220 | 3.0 A | 1200 V | 7.0 | 2.5 - 4.5 V | 17.5 nC |
| KNF42120A | TO-220F | 3.0 A | 1200 V | 7.0 | 2.5 - 4.5 V | 17.5 nC |
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Unit |
| BVDSS | Drain-to-Source Breakdown Voltage | VGS=0V, ID=250uA | 1200 | -- | -- | V |
| IDSS | Drain-to-Source Leakage Current | VDS=1200V, VGS=0V | -- | -- | 1 | uA |
| IGSS | Gate-to-Source Leakage Current | VGS=30V, VDS=0V | -100 | -- | 100 | nA |
| RDS(ON) | Drain-to-Source ON Resistance | VGS=10V, ID=1.5A | -- | 7.0 | 9.0 | |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250uA | 2.5 | -- | 4.5 | V |
| Ciss | Input Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 860 | -- | pF |
| Crss | Reverse Transfer Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 22 | -- | pF |
| Coss | Output Capacitance | VGS=0V, VDS=25V, f=1.0MHZ | -- | 60 | -- | pF |
| Qg | Total Gate Charge | VDD=600V, ID=3.0A, VGS=10V | -- | 17.5 | -- | nC |
| Qgs | Gate-to-Source Charge | VDD=600V, ID=3.0A, VGS=10V | -- | 5.0 | -- | nC |
| Qgd | Gate-to-Drain (Miller) Charge | VDD=600V, ID=3.0A, VGS=10V | -- | 5.5 | -- | nC |
| td(ON) | Turn-on Delay Time | VDD=600V, ID=3.0A, RG=4.7, VGS= 10V | -- | 17 | -- | nS |
| trise | Rise Time | VDD=600V, ID=3.0A, RG=4.7, VGS= 10V | -- | 6.0 | -- | nS |
| td(OFF) | Turn-Off Delay Time | VDD=600V, ID=3.0A, RG=4.7, VGS= 10V | -- | 23 | -- | nS |
| tfall | Fall Time | VDD=600V, ID=3.0A, RG=4.7, VGS= 10V | -- | 11 | -- | nS |
| ISD | Continuous Source Current | -- | -- | -- | 3.0 | A |
| VSD | Forward Voltage | IS=3.0A, VGS=0V | -- | - | 1.5 | V |
| trr | Reverse recovery time | VGS=0V ,IF=3.0A, diF/dt=-100A/s | -- | 200 | -- | ns |
| Qrr | Reverse recovery charge | VGS=0V ,IF=3.0A, diF/dt=-100A/s | -- | 760 | -- | nC |
2409302302_KIA-Semicon-Tech-KND42120A_C2896660.pdf
Related Products
complementary mosfets featuring xnrusemi xr20g10 with n channel and p channel fast switching capabilities
XR20G10 N-Ch and P-Ch Fast Switching MOSFETs Product Description The XR20G10 is a high-performance complementary N-channel and P-channel MOSFET series featuring extreme high cell density. This design provides excellent RDS(ON) and gate charge characteristics, making it ideal for synchronous buck ...
Zener diode YANGJIE BZX584B15VQ with 15 volt Zener voltage and 2 percent tolerance in compact SOD523 package
Product OverviewThe BZX584B3V6Q thru BZX584B36VQ series are small signal Zener diodes designed for general regulation functions. They feature an epoxy case that meets UL-94 V-0 flammability rating and is halogen-free, with Moisture Sensitivity Level 1. These diodes offer Zener voltages ranging from ...
Surface mount digital transistor YANGJIE DTC123YUA with built-in resistors and UL94 V0 flammability rating
Product OverviewThe DTC123YUA is a digital transistor with built-in resistors, designed for surface mount applications. It simplifies circuit configuration by eliminating the need for external input resistors, making it ideal for inverter circuits. The epoxy meets UL-94 V-0 flammability rating and ...
Epoxy Encapsulation Zener Diode YANGJIE BZX84B6V8Q Small Signal Device With Automotive Qualification
Product OverviewThe BZX84B3V6Q thru BZX84B36Q series are small signal Zener diodes designed for general regulation functions. They feature epoxy encapsulation meeting UL-94 V-0 flammability rating and are halogen-free. These diodes offer a Zener voltage range from 3.6V to 36V with approximately 2% ...
Contact Our Experts And Get A Free Consultation!
Our mission is to offer "High Quality" & "Good Service" & "Fast Delivery" to help our clients to gain more profits.
