Low RDS ON 2.9mOhm KIA Semicon Tech KCT2213A 200A 135V N CHANNEL MOSFET Suitable for Battery Protect Boards
Key Attributes
Model Number:
KCT2213A
Product Custom Attributes
Drain To Source Voltage:
135V
Current - Continuous Drain(Id):
200A
Operating Temperature -:
-55℃~+150℃
RDS(on):
3.6mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF
Number:
1 N-channel
Input Capacitance(Ciss):
10nF
Pd - Power Dissipation:
403W
Gate Charge(Qg):
150nC@10V
Mfr. Part #:
KCT2213A
Package:
TOLL-8
Product Description
Product Overview
This is a 200A, 135V N-CHANNEL MOSFET featuring SGT MOSFET technology for high ruggedness. It offers a low RDS(ON) of 2.9m(typ.) at VGS=10V, low Gate Charge (Typ 151nC), and improved dv/dt capability. The device is 100% Avalanche Tested and is suitable for applications such as Synchronous Rectification, Motor Control, and Li Battery Protect Boards.
Product Attributes
- Brand: KIA
- Part Number: KCT2213A
- Package: TOLL-8
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Test Conditions | Min. | Typ. | Max. | Unit |
| Drain-to-Source Voltage | VDSS | 135 | V | |||
| BVDSS | VGS=0V, ID=250uA | 135 | V | |||
| BVDSS / TJ | ID=250uA, referenced to 25C | 0.1 | V/C | |||
| Gate-to-Source Voltage | VGSS | 20 | V | |||
| IGSS | VGS=20V, VDS=0V | 100 | nA | |||
| Continuous Drain Current | ID | Tc=25 C | 200 | A | ||
| Tc=100 C | 180 | A | ||||
| IDM | 880 | A | ||||
| ISD | Integral PN-diode in MOSFET | 200 | A | |||
| Drain-to-Source ON Resistance | RDS(ON) | VGS=10V, ID=30A TJ=25C | 2.9 | 3.6 | m | |
| VGS=10V, ID=30A TJ=125C | 4.7 | m | ||||
| Gate Threshold Voltage | VGS(TH) | VDS=VGS,ID=250uA | 2.5 | 4.5 | V | |
| Forward transconductance | Gfs | VDS=5V, ID=30A | 87 | S | ||
| Gate resistance | Rg | f=1MHz | 2.1 | |||
| Capacitance | Ciss | VGS=0V,VDS=68V, f=100kHZ | 10000 | pF | ||
| Coss | 1200 | pF | ||||
| Crss | 30 | pF | ||||
| Total Gate Charge | Qg | VDS=108V,ID=30A, VGS=10V, IG=5mA | 150 | nC | ||
| Qgs | 54 | nC | ||||
| Qgd | 34 | nC | ||||
| Switching Times | td(ON) | VDS=68V, ID=30A, RG=4.7,VGS=10V | 55 | nS | ||
| trise | 68 | nS | ||||
| td(OFF) | 86 | nS | ||||
| tfall | 38 | nS | ||||
| Avalanche Energy | EAS | L=0.5mH, IAS=68A, VDD=50V, RG=25, Starting TJ=25C | 1156 | mJ | ||
| EAR | 100 | mJ | ||||
| Power Dissipation | PD | TC= 25 C | 403 | W | ||
| Thermal Resistance | RJC | 0.31 | C/W | |||
| Operating and Storage Temperature Range | TJ&TSTG | -55 | 150 | C |
2411121110_KIA-Semicon-Tech-KCT2213A_C41369551.pdf
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