High voltage N Channel MOSFET KIA Semicon Tech KIA5N50SD rated at 5A and 500V for power electronics
Product Overview
The KIA SEMICONDUCTORS 5N50S is a 5A, 500V N-Channel MOSFET designed for robust high-voltage applications. It features low on-resistance (RDS(ON)) of 1.35 (typ.) for DFN5*6 and 1.38 (typ.) for TO-252 packages at VGS=10V. The device offers specified avalanche energy, a source-to-drain diode recovery time comparable to discrete fast recovery diodes, and is characterized for use in bridge circuits. IDSS and VDS(on) are specified at elevated temperatures, ensuring reliable performance in demanding conditions.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: 5N50S
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | DFN5*6 | TO-252 | Unit | Test Conditions |
| Absolute Maximum Ratings | VDSS | 500 | 500 | V | |
| VGSS | 30 | V | |||
| ID | 5 | A | |||
| IDM | 15 | A | |||
| EAS* | 80 | mJ | TJ=25 C, VDD=100V, VGS=10V, IL=4A, L=10mH, RG=25 | ||
| PD | 68 | 44.6 | W | ||
| Derating Factor | PD | 0.55 | 0.36 | W/C | above 25C |
| TL | 260 | C | Maximum Temperature for Soldering | ||
| TJ&TSTG | -55 to 150 | C | Operating and Storage Temperature Range | ||
| Electrical Characteristics | BVDSS | 500 | V | VGS=0V, ID=250uA | |
| IDSS | 1 | uA | VDS=500V, VGS=0V | ||
| IGSS | 100 | nA | VGS=30V, VDS=0V | ||
| RDS(ON) | 1.35 | 1.38 | VGS=10V, ID=2.5A 2) | ||
| 1.55 | |||||
| VGS(TH) | 2.5 to 4.5 | V | VDS=VGS,ID=250uA | ||
| gfs | 15 | S | VDS=30V,ID=13A | ||
| Ciss | 525 | pF | VGS=0V,VDS=25V, f=1.0MHZ | ||
| Coss | 50 | pF | |||
| Crss | 4 | pF | |||
| Qg | 12 | nC | VDD=400V,ID=5A, VGS=10V 2) | ||
| VSD | 1.5 | V | Is=2A, VGS=0V diF/dt=100A/s, 1) | ||
2411121030_KIA-Semicon-Tech-KIA5N50SD_C20623380.pdf
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