High voltage N Channel MOSFET KIA Semicon Tech KIA5N50SD rated at 5A and 500V for power electronics

Key Attributes
Model Number: KIA5N50SD
Product Custom Attributes
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
1.38Ω@10V
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
4pF
Input Capacitance(Ciss):
525pF
Output Capacitance(Coss):
50pF
Pd - Power Dissipation:
44.6W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
KIA5N50SD
Package:
TO-252
Product Description

Product Overview

The KIA SEMICONDUCTORS 5N50S is a 5A, 500V N-Channel MOSFET designed for robust high-voltage applications. It features low on-resistance (RDS(ON)) of 1.35 (typ.) for DFN5*6 and 1.38 (typ.) for TO-252 packages at VGS=10V. The device offers specified avalanche energy, a source-to-drain diode recovery time comparable to discrete fast recovery diodes, and is characterized for use in bridge circuits. IDSS and VDS(on) are specified at elevated temperatures, ensuring reliable performance in demanding conditions.

Product Attributes

  • Brand: KIA SEMICONDUCTORS
  • Product Name: 5N50S
  • Origin: KIA SEMICONDUCTORS

Technical Specifications

ParameterSymbolDFN5*6TO-252UnitTest Conditions
Absolute Maximum RatingsVDSS500500V
VGSS30V
ID5A
IDM15A
EAS*80mJTJ=25 C, VDD=100V, VGS=10V, IL=4A, L=10mH, RG=25
PD6844.6W
Derating FactorPD0.550.36W/Cabove 25C
TL260CMaximum Temperature for Soldering
TJ&TSTG-55 to 150COperating and Storage Temperature Range
Electrical CharacteristicsBVDSS500VVGS=0V, ID=250uA
IDSS1uAVDS=500V, VGS=0V
IGSS100nAVGS=30V, VDS=0V
RDS(ON)1.351.38VGS=10V, ID=2.5A 2)
1.55
VGS(TH)2.5 to 4.5VVDS=VGS,ID=250uA
gfs15SVDS=30V,ID=13A
Ciss525pFVGS=0V,VDS=25V, f=1.0MHZ
Coss50pF
Crss4pF
Qg12nCVDD=400V,ID=5A, VGS=10V 2)
VSD1.5VIs=2A, VGS=0V diF/dt=100A/s, 1)

2411121030_KIA-Semicon-Tech-KIA5N50SD_C20623380.pdf

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