KIA Semicon Tech KCD3304A 90A 40V N Channel Power MOSFET with super low gate charge and switching performance
Key Attributes
Model Number:
KCD3304A
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
90A
RDS(on):
6.2mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.6V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
26pF
Output Capacitance(Coss):
210pF
Input Capacitance(Ciss):
750pF
Gate Charge(Qg):
13.5nC@10V
Mfr. Part #:
KCD3304A
Package:
TO-252
Product Description
Product Overview
90A, 40V N-Channel Fast-Switching Power MOSFET featuring advanced SGT technology, low RDS(ON) of 6.2m (typ.) at VGS=10V, and super low gate charge. This device offers excellent CdV/dt effect decline, is 100% Vds TESTED and 100% UIS TESTED. Available in a Green Device option.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Part Number: KCD3304A
- Package: TO-252
- Origin: KMOS Semiconductor
- Certifications: Green Device Available
Technical Specifications
| Parameter | Symbol | Ratings | Unit | Conditions |
| Drain-to-Source Voltage | VDS | 40 | V | VGS=0V |
| Gate-to-Source Voltage | VGS | 20 | V | VDS=0V |
| Continuous Drain Current | ID | 90 | A | TC=25C |
| 58 | A | TC=100C | ||
| Pulsed Drain Current | IDM | 240 | A | Current-Pulsed |
| Total Power Dissipation | PD | 51.7 | W | TC=25C |
| Avalanche Energy | EAS | 72 | mJ | VDD=24V, VGS=10V, L=0.5mH, IAS=17A |
| Operation Junction and Storage Temperature Range | TJ,TSTG | -55 to 150 | C | - |
| Thermal Resistance, Junction-to-Case | RJC | 2.9 | C/W | 1) |
| Drain-Source Breakdown Voltage | BVDSS | 40 | V | VGS=0V, ID=250uA |
| Drain-Source Leakage Current | IDSS | 1 | uA | VDS=40V,VGS=0V |
| Gate-Source Leakage Current | IGSS | 100 | nA | VGS=20V, VDS=0V |
| Gate Threshold Voltage | VGS(th) | 1.0 - 2.5 | V | VGS=VDS, ID=250uA |
| Static Drain-Source On-Resistance | RDS(ON) | 6.2 - 7.5 | m | VGS=10V, ID=10A |
| 9.5 - 12 | m | VGS=4.5V, ID=8A | ||
| Gate Resistance | Rg | 6.0 | VDS=0V, VGS=0V,f=1.0MHz | |
| Input Capacitance | Ciss | 750 | pF | VDS=20V , VGS=0V , f=1.0MHz |
| Output Capacitance | Coss | 210 | pF | - |
| Reverse Transfer Capacitance | Crss | 26 | pF | - |
| Turn-On Delay Time | td(on) | 14 | ns | VDS=20V,VGS=10V, RG=5.0,ID=10A |
| Rise Time | tr | 6 | ||
| Turn-Off Delay Time | td(off) | 16 | ns | - |
| Fall Time | tf | 10 | ||
| Total Gate Charge | Qg | 13.5 | nC | VDS=20V, VGS=10V , ID=10A |
| Gate-Source Charge | Qgs | 2.1 | nC | - |
| Gate-Drain Charge | Qg d | 3.2 | nC | - |
| Source-Drain Current (Body Diode) | ISD | 90 | A | 1),5) |
| Diode Forward Voltage | VSD | 1.2 | V | VGS=0V, ISD=15A,TJ=25C |
| Reverse Recovery Time | trr | 22 | nS | TJ=25C, IF=15A, di/dt=100A/s |
| Reverse Recovery Charge | Qrr | 11 | nC | - |
2509041042_KIA-Semicon-Tech-KCD3304A_C51883046.pdf
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