Power Management Electronic Transistor KUU B772 PNP Bipolar Type with Low Saturation Voltage Feature
Key Attributes
Model Number:
B772
Product Custom Attributes
Emitter-Base Voltage(Vebo):
6V
Current - Collector Cutoff:
1uA
Pd - Power Dissipation:
500mW
Transition Frequency(fT):
80MHz
Type:
PNP
Current - Collector(Ic):
3A
Collector - Emitter Voltage VCEO:
30V
Mfr. Part #:
B772
Package:
SOT-89
Product Description
Product Overview
The B772 is a PNP bipolar transistor designed for low saturation voltage applications. It is suitable for various electronic circuits requiring efficient power management.
Product Attributes
- Brand: Yongyutai (implied by website)
- Model: B772
- Package Type: SOT-89
Technical Specifications
| Characteristic | Symbol | Rating | Unit | Min | Type | Max | Notes |
| Collector-Base Voltage | VCBO | -40 | V | ||||
| Collector-Emitter Voltage | VCEO | -30 | V | ||||
| Emitter-Base Voltage | VEBO | -6 | V | ||||
| Collector Current | IC | -3000 | mA | ||||
| Power Dissipation | PC(Ta=25) | 500 | mW | ||||
| Thermal Resistance Junction-Ambient | RJA | 250 | /W | ||||
| Junction and Storage Temperature | TJ,Tstg | -55 to +150 | |||||
| Collector-Base Breakdown Voltage | BVCBO | -40 | V | (IC= -100A, IE=0) | |||
| Collector-Emitter Breakdown Voltage | BVCEO | -30 | V | (IC= -10mA, IB=0) | |||
| Emitter-Base Breakdown Voltage | BVEBO | -6 | V | (IE= -100A, IC=0) | |||
| Collector-Base Leakage Current | ICBO | A | -1 | (VCB= -40V, IE=0) | |||
| Collector-Emitter Leakage Current | ICEO | A | -10 | (VCE= -30V, IB=0) | |||
| Emitter-Base Leakage Current | IEBO | A | -1 | (VEB= -6V, IC=0) | |||
| DC Current Gain | HFE | 60 | 400 | (VCE= -2V, IC= -1000mA) | |||
| Collector-Emitter Saturation Voltage | VCE(sat) | V | -0.5 | (IC= -2A, IB= -0.2A) | |||
| Base-Emitter Saturation Voltage | VBE(sat) | V | -1.5 | (IC= -2A, IB= -0.2A) | |||
| Transition Frequency | fT | MHZ | 80 | (VCE= -5V, IC= -100mA) | |||
| Output Capacitance | Cob | pF | 35 | (VCB= -10V, IE=0, f=1MHZ) | |||
2411261207_KUU-B772_C42395205.pdf
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