Low Gate Charge 160A MOSFET KIA Semicon Tech KNB2708A with 80V Voltage Rating and Fast Recovery Diode

Key Attributes
Model Number: KNB2708A
Product Custom Attributes
Drain To Source Voltage:
80V
Current - Continuous Drain(Id):
-
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.8mΩ@10V,24A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
-
Reverse Transfer Capacitance (Crss@Vds):
260pF
Number:
-
Output Capacitance(Coss):
650pF
Input Capacitance(Ciss):
9.3nF
Pd - Power Dissipation:
313W
Gate Charge(Qg):
115nC@10V
Mfr. Part #:
KNB2708A
Package:
TO-263
Product Description

Product Overview

The KNX2708A is a 160A, 80V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. Featuring proprietary new trench technology, it offers a low RDS(ON) of 4.0m typ. at VGS=10V, minimized switching loss due to low gate charge, and a fast recovery body diode. It is ideal for high-efficiency DC/DC converters, synchronous rectification, and UPS inverters.

Product Attributes

  • Brand: KIA
  • Origin: KIA SEMICONDUCTORS

Technical Specifications

Part NumberPackageVDSS (V)ID (A)RDS(ON) (m)VGS(TH) (V)Qg (nC)EAS (mJ)PD (W)
KNP2708ATO-220801604.0 (typ.)2.0 - 4.0115 (typ.)1100313
KNB2708ATO-263801604.0 (typ.)2.0 - 4.0115 (typ.)1100313

2410010000_KIA-Semicon-Tech-KNB2708A_C1509101.pdf

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