power control KIA Semicon Tech KNF4N65F 650V MOSFET for in adaptors chargers and SMPS standby power
Key Attributes
Model Number:
KNF4N65F
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
4A
RDS(on):
2.4Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V
Reverse Transfer Capacitance (Crss@Vds):
2.8pF
Output Capacitance(Coss):
40pF
Input Capacitance(Ciss):
560pF
Pd - Power Dissipation:
24W
Gate Charge(Qg):
10nC@10V
Mfr. Part #:
KNF4N65F
Package:
TO-220F
Product Description
Product Overview
The 4N65F is a 650V N-channel planar MOSFET from KMOS Semiconductor, featuring an advanced planar process for enhanced performance. It offers a low RDS(ON) of 2.4 (typ.) at VGS=10V, RoHS compliance, minimized switching loss due to low gate charge, and a fast recovery body diode. This MOSFET is suitable for applications such as adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KMOS Semiconductor
- Part Number: 4N65F
- Package: TO-220F
- Certifications: RoHS Compliant
Technical Specifications
| Parameter | Symbol | Ratings/Conditions | Unit |
| Absolute Maximum Ratings | VDSS | 650 | V |
| VGSS | ±30 | V | |
| ID | 4.0 | A | |
| IDM | 16 | A | |
| EAS | 70 | mJ | |
| PD | 24 | W | |
| PD Derating Factor above 25ºC | 0.19 | W/ºC | |
| TL (Soldering Temperature) | 300 | ºC | |
| TJ&TSTG (Operating and Storage Temperature Range) | -55 to 150 | ºC | |
| RθJC (Thermal Resistance, Junction-to-Case) | 5.2 | ºC/W | |
| Electrical Characteristics | BVDSS (Drain-to-Source Breakdown Voltage) | VGS=0V, ID=250uA | 650 V |
| IDSS (Drain-to-Source Leakage Current) | VDS=650V, VGS=0V | - 1 uA | |
| IGSS (Gate-to-Source Leakage Current) | VGS=±30V, VDS=0V | - ±0.1 uA | |
| RDS(ON) (Drain-to-Source ON Resistance) | VGS=10V, ID=2A | 2.4 (typ.) 3.0 (max.) Ω | |
| VGS(TH) (Gate Threshold Voltage) | VDS=VGS,ID=250uA | 2.0 - 4.0 V | |
| gfs (Forward Transconductance) | VDS=15V,ID=2A | - 5.0 S | |
| Ciss (Input Capacitance) | VGS=0V,VDS=25V, f=1.0MHZ | - 560 pF | |
| Coss (Output Capacitance) | VGS=0V,VDS=25V, f=1.0MHZ | - 40 pF | |
| Crss (Reverse Transfer Capacitance) | VGS=0V,VDS=25V, f=1.0MHZ | - 2.8 pF | |
| Qg (Total Gate Charge) | VDD=325V,ID=4A, VGS=0 to 10V | - 10 nC | |
| ISD (Continuous Source Current) | Integral PN-diode in MOSFET | - - 4.0 A |
2509041415_KIA-Semicon-Tech-KNF4N65F_C51883050.pdf
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