load switching with KIA Semicon Tech KNY6610A 15A 100V N Channel MOSFET featuring trench technology
Key Attributes
Model Number:
KNY6610A
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
15A
RDS(on):
83mΩ@10V,10A
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.7V
Reverse Transfer Capacitance (Crss@Vds):
31pF@25V
Number:
1 N-channel
Input Capacitance(Ciss):
1.073nF@25V
Pd - Power Dissipation:
55W
Gate Charge(Qg):
19.2nC@10V
Mfr. Part #:
KNY6610A
Package:
DFN-8(5x6)
Product Description
Product Overview
This 15A, 100V N-Channel MOSFET is manufactured using KIA's advanced planar stripe TRENCH technology. This technology is designed to minimize conduction loss, offer superior switching performance, and ensure high energy pulse withstand capability in avalanche and commutation modes. Key features include very low on-resistance (RDS(ON)=83m typ.), low Crss, fast switching, 100% avalanche testing, and improved dv/dt capability. It is suitable for applications such as PWM, Power Management, and Load Switching.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
Technical Specifications
| Parameter | Symbol | Rating | Units | Test Conditions | Min | Typ | Max |
| Absolute Maximum Ratings | VDSS | 100 | V | ||||
| ID | 15 | A | TC=25C | ||||
| ID | 10 | A | TC=100C | ||||
| IDM | 60 | A | Pulsed | ||||
| Thermal Characteristics | RJC | 2.73 | C/W | ||||
| PD | 55 | W | TC=25C | ||||
| Electrical Characteristics | BVDSS | 100 | V | VGS=0V,ID=250uA | 100 | - | - |
| IDSS | - | uA | VDS=100V, VGS=0V | - | - | 1 | |
| IGSS | - | uA | VGS=+20V, VDS=0V | - | - | 1 | |
| VGS(TH) | - | V | VDS= VGS,ID=250uA | 1.0 | 1.7 | 2.5 | |
| RDS(on) | - | m | VGS=10V,ID=10A | - | 83 | 110 | |
| Capacitance | Ciss | - | pF | VDS=25V,VGS=0V f=1MHz | - | 1073 | - |
| Coss | - | pF | - | 57 | - | ||
| Crss | - | pF | - | 31 | - | ||
| Switching Characteristics | td(on) | - | ns | VGS=10V,VDS=30V, RG=1.8, ID=10A | 12.6 | ||
| tr | - | ns | 6 | ||||
| td(off) | - | ns | 32.5 | ||||
| tf | - | ns | 4.3 | ||||
| Gate Charge | Qg | - | nC | VDS=30V, ID=15A VGS=10V | - | 19.2 | - |
| Qgs | - | nC | - | 3.4 | - | ||
| Diode Characteristics | VSD | - | V | ISD=15A,VGS=0V, TJ=25C | - | - | 1.2 |
| Part Number | Package | Brand |
| KNY6610A | DFN5*6 | KIA |
| KND6610A | TO-252 | KIA |
2410121314_KIA-Semicon-Tech-KNY6610A_C5156067.pdf
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