N Channel Power MOSFET KIA Semicon Tech KNF6450A Silicon Gate Device for Switching Power Supplies
Key Attributes
Model Number:
KNF6450A
Product Custom Attributes
Configuration:
Half-Bridge
Drain To Source Voltage:
500V
Current - Continuous Drain(Id):
13A
Operating Temperature -:
-55℃~+150℃
RDS(on):
480mΩ@10V,6.5A
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
23pF
Number:
1 N-channel
Input Capacitance(Ciss):
2.149nF
Output Capacitance(Coss):
211pF
Pd - Power Dissipation:
48W
Gate Charge(Qg):
44nC@10V
Mfr. Part #:
KNF6450A
Package:
TO-220F
Product Description
Product Overview
The KNX6450A is an N-channel enhancement mode silicon gate power MOSFET designed for high voltage, high speed power switching applications. It is suitable for use in high efficiency switched mode power supplies, active power factor correction, and electronic lamp ballasts based on half bridge topology. Key features include a low Gate Charge to minimize switching loss and a fast recovery body diode.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Certifications: ROHS Compliant
Technical Specifications
| Part Number | Package | Drain-to-Source Voltage (VDSS) | Continuous Drain Current (ID) | Static Drain-Source On-Resistance (RDS(on)) | Gate Threshold Voltage (VGS(th)) | Input Capacitance (Ciss) | Total Gate Charge (Qg) |
| KNX6450A | TO-220F | 500 V | 13 A | 0.48 (Max) | 2.0 - 4.0 V | 2149 pF (Typ) | 44 nC (Typ) |
| KNP6450A | TO-220 | 500 V | 13 A | 0.48 (Max) | 2.0 - 4.0 V | 2149 pF (Typ) | 44 nC (Typ) |
2410010000_KIA-Semicon-Tech-KNF6450A_C135542.pdf
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