Low RDS ON 3A 1500V MOSFET KIA Semicon Tech KNF42150A ideal for high speed switching in adaptor and SMPS
Key Attributes
Model Number:
KNF42150A
Product Custom Attributes
Drain To Source Voltage:
1.5kV
Current - Continuous Drain(Id):
3A
RDS(on):
8.2Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
4.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
30pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
35W
Input Capacitance(Ciss):
1.5nF@25V
Gate Charge(Qg):
35nC@10V
Mfr. Part #:
KNF42150A
Package:
TO-220F
Product Description
Product Overview
This 3A, 1500V N-Channel MOSFET from KIA SEMICONDUCTORS offers high-speed switching capabilities. It is designed for applications such as adaptors, chargers, and SMPS standby power, featuring a low RDS(ON) of 5.5 (typ.) at VGS=10V and a fully isolated plastic package. Available in TO-263, TO-220F, TO-247, and TO-3PF packages.
Product Attributes
- Brand: KIA
- Origin: KIA SEMICONDUCTORS
- Part Number Prefix: KNB, KNF, KNM, KNL
Technical Specifications
| Parameter | Symbol | TO-263 / TO-3PF | TO-220F | TO-247 | Unit |
| Drain-to-Source Voltage | VDSS | 1500 | 1500 | 1500 | V |
| Gate-to-Source Voltage | VGSS | 30 | V | ||
| Continuous Drain Current | ID | 3.0 | 3.0 | 3.0 | A |
| Pulsed Drain Current at VGS=10V | IDM | 12 | 12 | 12 | A |
| Single Pulse Avalanche Energy, L=30mH | EAS | 500 | mJ | ||
| Power Dissipation | PD | 90 | 35 | 186 | W |
| Derating Factor above 25C | 0.72 | 0.28 | 1.49 | W/C | |
| Soldering Temperature (1.6mm from case, 10s) | TL | 300 | C | ||
| Operating and Storage Temperature Range | TJ&TSTG | -55 to 150 | C | ||
| Thermal Resistance, Junction-to-Case | RJC | 1.38 | 3.75 | 0.67 | C/W |
| Thermal Resistance, Junction-to-Ambient | RJA | 65 | 100 | 55 | C/W |
| Drain-to-Source Breakdown Voltage | BVDSS | 1500 | V | ||
| Drain-to-Source Leakage Current | IDSS | 1 (at 1500V) | uA | ||
| Gate-to-Source Leakage Current | IGSS | 100 | nA | ||
| Integrated Gate Resistor | Rg | 4.5 | |||
| Drain-to-Source ON Resistance | RDS(ON) | 5.5 (typ.) | |||
| Gate Threshold Voltage | VGS(TH) | 2.5 - 4.5 | V | ||
| Forward Transconductance | gfs | 3.0 | S | ||
| Input Capacitance | Ciss | 1500 | pF | ||
| Reverse Transfer Capacitance | Crss | 30 | pF | ||
| Output Capacitance | Coss | 93 | pF | ||
| Total Gate Charge | Qg | 35 | nC | ||
| Gate-to-Source Charge | Qgs | 9 | nC | ||
| Gate-to-Drain (Miller) Charge | Qg | 10 | nC | ||
| Turn-on Delay Time | td(ON) | 28 | nS | ||
| Rise Time | tr | 50 | nS | ||
| Turn-Off Delay Time | td(OFF) | 55 | nS | ||
| Fall Time | tf | 53 | nS | ||
| Continuous Source Current | ISD | 3 | A | ||
| Pulsed Source Current | ISM | 12 | A | ||
| Forward Voltage | VSD | 1.6 | V | ||
| Reverse recovery time | trr | 255 | ns | ||
| Reverse recovery charge | Qrr | 1.1 | uC | ||
2411121110_KIA-Semicon-Tech-KNF42150A_C41369543.pdf
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