4.0A 1000V N CHANNEL MOSFET KIA Semicon Tech KNF43100A with low gate charge and fast recovery diode
Key Attributes
Model Number:
KNF43100A
Product Custom Attributes
Drain To Source Voltage:
1kV
Current - Continuous Drain(Id):
4A
RDS(on):
2.2Ω@10V
Gate Threshold Voltage (Vgs(th)):
5V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
21pF
Number:
1 N-channel
Input Capacitance(Ciss):
1.47nF
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
33W
Gate Charge(Qg):
36nC@10V
Mfr. Part #:
KNF43100A
Package:
TO-220F
Product Description
Product Overview
This is a 4.0A, 1000V N-CHANNEL MOSFET from KIA SEMICONDUCTORS. It features low gate charge for minimized switching loss and a fast recovery body diode. Ideal for applications such as adaptors, chargers, and SMPS standby power.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Certifications: RoHS Compliant
Technical Specifications
| Part Number | Package | Brand | Drain-to-Source Voltage (VDSS) | Gate-to-Source Voltage (VGSS) | Continuous Drain Current (ID) @ Tc=25 C | Pulsed Drain Current (IDM) @ VGS=10V | Single Pulse Avalanche Energy (EAS) @ VDD=50V | Maximum Power Dissipation (PD) | Max. Junction Temperature (TJmax) | Storage Temperature Range (TSTG) | Thermal Resistance, Junction-to-Case (RJC) | Thermal Resistance, Junction-to-Ambient (RJA) | Drain-to-Source Breakdown Voltage (BVDSS) @ VGS=0V, ID=250uA | Drain-to-Source Leakage Current (IDSS) @ VDS=1000V, VGS=0V | Gate-to-Source Leakage Current (IGSS) @ VGS=30V, VDS=0V | Drain-to-Source ON Resistance (RDS(ON)) @ VGS=10V, ID=2.0A | Gate Threshold Voltage (VGS(TH)) @ VDS=VGS,ID=250uA | Input Capacitance (Ciss) @ VGS=0V, VDS=25V, f=1.0MHZ | Reverse Transfer Capacitance (Crss) | Output Capacitance (Coss) | Total Gate Charge (Qg) @ VDD=500V, ID=4.0A, VGS=10V | Gate-to-Source Charge (Qgs) | Gate-to-Drain (Miller) Charge (Qg) | Turn-on Delay Time (td(ON)) @ VDD=500V, ID=4.0A, RG=4.7, VGS= 10V | Rise Time (trise) | Turn-Off Delay Time (td(OFF)) | Fall Time (tfall) | Continuous Source Current (ISD) | Forward Voltage (VSD) @ IS=4.0A, VGS=0V | Reverse recovery time (trr) @ VGS=0V ,IF=4.0A, diF/dt=-100A/s | Reverse recovery charge (Qrr) |
| KNP43100A | TO-220 | KIA | 1000 V | 30 V | 4.0 A | 16 A | 450 mJ | 33 W | 150 C | -55 to 150 C | 3.78 C/W | 100 C/W | 1000 V | 1 uA | -100 to 100 nA | 2.2 - 2.5 | 3.0 - 5.0 V | 1470 pF | 21 pF | 155 pF | 36 nC | 7.5 nC | 14 nC | 20 nS | 23 nS | 28 nS | 26 nS | 4 A | -1.5 V | 320 ns | 1.0 uC |
| KNF43100A | TO-220F | KIA | 1000 V | 30 V | 4.0 A | 16 A | 450 mJ | 33 W | 150 C | -55 to 150 C | 3.78 C/W | 100 C/W | 1000 V | 1 uA | -100 to 100 nA | 2.2 - 2.5 | 3.0 - 5.0 V | 1470 pF | 21 pF | 155 pF | 36 nC | 7.5 nC | 14 nC | 20 nS | 23 nS | 28 nS | 26 nS | 4 A | -1.5 V | 320 ns | 1.0 uC |
2508261745_KIA-Semicon-Tech-KNF43100A_C7465117.pdf
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