N channel MOSFET 7A 30V KIA Semicon Tech KIA4603AE designed to meet RoHS and green product standards
Key Attributes
Model Number:
KIA4603AE
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
7A
Operating Temperature -:
-
RDS(on):
18mΩ@10V,7A
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
59pF
Number:
1 N-channel
Input Capacitance(Ciss):
583pF
Output Capacitance(Coss):
77pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
6nC@4.5V
Mfr. Part #:
KIA4603AE
Package:
SOP-8
Product Description
7A, 30V N-CHANNEL MOSFET KIA4603A
The KIA4603A is a high cell density trenched N-channel MOSFET designed for synchronous buck converter applications. It offers excellent RDS(on) and low gate charge, meeting RoHS and Green Product requirements. This device is suitable for applications demanding efficient power conversion.
Product Attributes
- Brand: KIA SEMICONDUCTORS
- Product Name: KIA4603A
- Certifications: RoHS, Green Product
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Units |
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=-250A | 30 | - | - | V |
| BVDSS Temperature Coefficient | BVDSS/ TJ | Reference to 25C, ID=1mA | - | 0.034 | - | V/C |
| Drain-Source Leakage Current | IDSS | VDS=24V,VGS=0V, TJ=25C | - | - | 1 | A |
| Drain-Source Leakage Current | IDSS | VDS=24V,VGS=0V, TJ=55C | - | - | 5 | A |
| Gate-Source Leakage Current | IGSS | VGS=+20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS, ID=250A | 1.2 | 1.5 | 2.5 | V |
| VGS(th) Temperature Coefficient | VGS(th) | - | - | -3.84 | - | mV/ C |
| Static Drain-Source On-Resistance | RDS(on) | VGS=10V,ID=7A | - | 14.5 | 18 | m |
| Static Drain-Source On-Resistance | RDS(on) | VGS=4.5V,ID=4A | - | 20 | 26 | m |
| Forward Transconductance | gFS | VDS=5V, ID=7A | - | 6.2 | - | S |
| Diode Forward Voltage | VSD | VGS=0V,IS=1A, TJ=25C | - | - | 1.2 | V |
| Gate Resistance | Rg | VDS=0V, VGS=0V,f=1MHz | - | 1.04 | 2.1 | |
| Total Gate Charge (4.5V) | Qg | VDS=15V, VGS=4.5V ID =7A | - | 6 | 8.4 | nC |
| Gate-Source Charge | Qgs | - | - | 2.2 | 3.1 | - |
| Gate-Drain Charge | Qgd | - | - | 2 | 2.8 | - |
| Turn-on Delay Time | td(on) | VDD=15V, RG=3.3, VGS=10V ID=7A | - | 1.2 | 2.4 | ns |
| Rise Time | tr | - | - | 40 | 72 | - |
| Turn-off Delay Time | td(off) | - | - | 18 | 36 | - |
| Fall Time | tf | - | - | 7.2 | 14.4 | - |
| Input Capacitance | Ciss | VGS=0V, VDS=15V F=1.0MHZ | - | 583 | 816.2 | pF |
| Output Capacitance | Coss | - | - | 77 | 107.8 | - |
| Reverse Transfer Capacitance | Crss | - | - | 59 | 82.6 | - |
| Continuous Source Current | IS | VG=VD=0V,Force current | - | - | 7 | A |
| Pulsed Source Current | ISM | - | - | - | 35 | A |
| Reverse Recovery Time | trr | IF=7A,dl/dt=100A/us, TJ=25C | - | 7.2 | - | nS |
| Reverse Recovery Charge | Qrr | - | - | 2.9 | - | nC |
Absolute Maximum Ratings
| Parameter | Symbol | Rating | Units |
| Drain-Source Voltage | VDSS | 30 | V |
| Gate-Source Voltage | VGS | +20 | V |
| Continuous Drain Current VGS@10V, TA=25C | ID | 7.0 | A |
| Continuous Drain Current VGS@10V, TA=70C | ID | 5.6 | A |
| Pulsed Drain Current | IDM | 35 | A |
| Single Pulse Avalanche Energy | EAS | 20 | mJ |
| Avalanche Current | IAS | 20 | A |
| Total Power Dissipation TA=25C | PD | 1.5 | W |
| Junction and Storage Temperature Range | TJ ,TSTG | -55 to150 | C |
| Thermal Resistance-Junction to Ambient | RJA | 85 | C/W |
| Thermal Resistance-Junction to Case | RJC | 25 | C/W |
2410010000_KIA-Semicon-Tech-KIA4603AE_C135558.pdf
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